scholarly journals Low cost high voltage GaN polarization superjunction field effect transistors

2017 ◽  
Vol 214 (8) ◽  
pp. 1600834 ◽  
Author(s):  
H. Kawai ◽  
S. Yagi ◽  
S. Hirata ◽  
F. Nakamura ◽  
T. Saito ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 863
Author(s):  
Mahmuda Akter Monne ◽  
Peter Mack Grubb ◽  
Harold Stern ◽  
Harish Subbaraman ◽  
Ray T. Chen ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
Phased Array ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Array Antenna ◽  
Phased Array Antenna ◽  
Field Patterns ◽  
Radiating Element ◽  
True Time

Low-cost and conformal phased array antennas (PAAs) on flexible substrates are of particular interest in many applications. The major deterrents to developing flexible PAA systems are the difficulty in integrating antenna and electronics circuits on the flexible surface, as well as the bendability and oxidation rate of radiating elements and electronics circuits. In this research, graphene ink was developed from graphene flakes and used to inkjet print the radiating element and the active channel of field effect transistors (FETs). Bending and oxidation tests were carried out to validate the application of printed flexible graphene thin films in flexible electronics. An inkjet-printed graphene-based 1 × 2 element phased array antenna was designed and fabricated. Graphene-based field effect transistors were used as switches in the true-time delay line of the phased array antenna. The graphene phased array antenna was 100% inkjet printed on top of a 5 mil flexible Kapton® substrate, at room temperature. Four possible azimuth steering angles were designed for −26.7°, 0°, 13°, and 42.4°. Measured far-field patterns show good agreement with simulation results.

Low-cost fabrication of submicron all polymer field effect transistors

2006 ◽  
Vol 88 (13) ◽  
pp. 133502 ◽  
Author(s):  
J. Z. Wang ◽  
J. Gu ◽  
F. Zenhausern ◽  
H. Sirringhaus
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost
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