Study of Copper Surface Preparation by Sequential Atomic Layer Wet Etching and Laser Annealing Treatments

2017 ◽  
Vol 80 (2) ◽  
pp. 233-241 ◽  
Author(s):  
Akihisa Iwasaki ◽  
Yuya Akanishi ◽  
Fulvio Mazzamuto ◽  
Els Kesters ◽  
Quoc Toan Le ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Copper Surface ◽  
Wet Etching

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

Selective Laser Annealing For Device Processing

1982 ◽  
Vol 13 ◽  
Author(s):  
I.D. Calder ◽  
A.A. Naem ◽  
H.H. Naguib
Keyword(s):  
Plasma Etching ◽  
Laser Annealing ◽  
Wet Etching ◽  
Laser Crystallization ◽  
Initial Value ◽  
Step Potential ◽  
Device Processing ◽  
Potential Applications ◽  
Polysilicon Films ◽  
Ar Coating

ABSTRACTSelective laser crystallization of undoped polysilicon films has been achieved through the use of a patterned Si3N4 anti-reflection (AR) coating. The recrystallized poly-Si beneath the AR cap exhibits an etch rate 50–90% lower than the surrounding uncapped material, allowing anisotropic etching of poly-Si for the fabrication of MOSFET gates. Undercut is reduced by at least a factor of two from unannealed material. Annealed edge profiles are uniform within ±0.03μm for plasma etching (±0.05 for wet etching) compared to ±0.1μm (± 0.25μm for wet etching) for unannealed regions. The sheet resistivity of 0.5μm films doped by phosphorus diffusion was reduced from an initial value of 82±5 Ω/□ to 40±8 Ω/□ when the dopant was diffused into recrystallized poly-Si and to a final value of 10.2 ± 0.2 Ω/□; after a further laser activation step. Potential applications in VLSIC processing are discussed.

Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

ACS Nano ◽  
2021 ◽  
Author(s):  
Xia Liu ◽  
Arnob Islam ◽  
Ning Yang ◽  
Bradley Odhner ◽  
Mary Anne Tupta ◽  
...  
Keyword(s):  
Field Effect ◽  
Laser Annealing ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Logic Circuits ◽  
Scanning Laser

Toward the Surface Preparation of InGaAs for the Future CMOS Integration

2018 ◽  
Vol 282 ◽  
pp. 39-42 ◽  
Author(s):  
Sang Woo Lim
Keyword(s):  
Lattice Mismatch ◽  
Surface Reactions ◽  
Surface Preparation ◽  
Surface Oxidation ◽  
Compound Semiconductors ◽  
Compound Semiconductor ◽  
Wet Etching ◽  
Material Loss ◽  
High K ◽  
Made In

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3

2019 ◽  
Vol 686 ◽  
pp. 137424 ◽  
Author(s):  
Celine Vanhaverbeke ◽  
Maarten Cauwe ◽  
Arno Stockman ◽  
Maaike Op de Beeck ◽  
Herbert De Smet
Keyword(s):  
Linear Sweep Voltammetry ◽  
Atomic Layer ◽  
Wet Etching ◽  
Linear Sweep ◽  
Copper Electroplating
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