scholarly journals Thermal chemistry of the Cu-KI5 atomic layer deposition precursor on a copper surface

2015 ◽  
Vol 33 (1) ◽  
pp. 01A108 ◽  
Author(s):  
Qiang Ma ◽  
Francisco Zaera
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Copper Surface ◽  
Thermal Chemistry ◽  
Layer Deposition

Atomic layer deposition of zirconium oxide on copper patterned silicon substrate

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
J. Parulekar ◽  
S. Selvaraj ◽  
C.G. Takoudis
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Copper Oxide ◽  
Metallic Copper ◽  
Atomic Layer ◽  
Copper Surface ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Copper Surfaces ◽  
Layer Deposition

Atomic layer deposition (ALD) was performed on copper patterned silicon substrates using zirconium precursor and ethanol as both an oxygen source and reducing agent. Ethanol targeted copper oxide formed on the copper surface, reverting it back to metallic copper. Selective ALD (SALD) of metal oxides on silicon surfaces over copper surfaces has been demonstrated up to 2-3 nm, though the process seems to lose its selectivity afterwards. We strive to maintain selectivity to thicker films by stepping away from conventional ALD processes utilizing oxidants. From previous studies with HfO2 and TiO2 SALD, we speculate that the oxidation of copper to copper oxide spoils selectivity. In this present study, we carried out oxidant-free ALD by using ethanol as a co-reactant solely on the silicon portion of these substrates. This process will occur in-situ every 20-30 ALD cycles for ALD of ZrO2. As expected, reduced ALD growth rate was observed with ethanol compared to that of water or ozone, with a growth rate of about 0.04 nm/cycle on the silicon portion of the substrate.

Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition

2002 ◽  
Vol 8 (4) ◽  
pp. 149 ◽  
Author(s):  
K.-E. Elers ◽  
V. Saanila ◽  
P.J. Soininen ◽  
W.-M. Li ◽  
J.T. Kostamo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Copper Surface ◽  
Layer Deposition

Cleaning and Passivation of Copper Surface Using N2H4, and Self-Assembled Monolayers for Area-Selective Atomic Layer Deposition (AS-ALD) Applications

2020 ◽  
Vol MA2020-02 (23) ◽  
pp. 1663-1663
Author(s):  
Su Min Hwang ◽  
Jin-Hyun Kim ◽  
Sang Woo Kim ◽  
Yong Chan Jung ◽  
Jean-Francois Veyan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Copper Surface ◽  
Self Assembled Monolayers ◽  
Layer Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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