Fabrication of template with dual‐scale structures based on glass wet etching and its application in hydrophobic surface preparation

2014 ◽  
Vol 9 (5) ◽  
pp. 340-344 ◽  
Author(s):  
Quandai Wang ◽  
Yixiong Song ◽  
Li Wang ◽  
Jiming Xiao
2013 ◽  
Vol 286 ◽  
pp. 206-211 ◽  
Author(s):  
Sungnam Lyu ◽  
Dang C. Nguyen ◽  
Dongseob Kim ◽  
Woonbong Hwang ◽  
Bumsang Yoon

Langmuir ◽  
2010 ◽  
Vol 26 (1) ◽  
pp. 484-491 ◽  
Author(s):  
Yudi Rahmawan ◽  
Myoung-Woon Moon ◽  
Kyung-Suk Kim ◽  
Kwang-Ryeol Lee ◽  
Kahp-Yang Suh

2020 ◽  
pp. 2000913
Author(s):  
Enyang Liu ◽  
Liyuan Wang ◽  
Xiaoli Yin ◽  
Jinhui Hu ◽  
Sirong Yu ◽  
...  

2014 ◽  
Vol 219 ◽  
pp. 85-88 ◽  
Author(s):  
Yukifumi Yoshida ◽  
Masayuki Otsuji ◽  
Hiroaki Takahashi ◽  
Jim Snow ◽  
Farid Sebaai ◽  
...  

of these new materials have necessitated the evaluation of new chemicals and processing methods. The control of the Dissolved Oxygen (DO) concentration to suppress Cu corrosion is well established in BEOL processing and likewise in order to achieve a hydrophobic surface after pre-epi cleaning in FEOL surface preparation [2].


2017 ◽  
Vol 80 (2) ◽  
pp. 233-241 ◽  
Author(s):  
Akihisa Iwasaki ◽  
Yuya Akanishi ◽  
Fulvio Mazzamuto ◽  
Els Kesters ◽  
Quoc Toan Le ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1541
Author(s):  
Miaomiao Duan ◽  
Jingjun Wu ◽  
Yubin Zhang ◽  
Ning Zhang ◽  
Jun Chen ◽  
...  

An integrated functional anti-reflective surface is of great significance for optical and optoelectronic devices. Hence, its preparation has attracted great attention from many researchers. This study combined wet alkaline etching approaches and reactive ion etching (RIE) techniques to create a dual-scale hierarchical anti-reflective surface on silicon substrates. The effect of RIE time on surface morphology and optical performance was investigated using multiple characterization forms. The optimal parameters for the fabrication of dual-scale structures by the composite etching process were explored. The silicon surface with a dual-scale structure indicated excellent anti-reflective properties (minimum reflectivity of 0.9%) in the 300 to 1100 nm wavelength range. In addition, the ultra-low reflection characteristic of the surface remained prominent at incident light angles up to 60°. The simulated spectra using the finite difference time domain (FDTD) method agreed with the experimental results. Superhydrophobicity and self-cleaning were also attractive properties of the surface. The functionally integrated surface enables silicon devices to have broad application prospects in solar cells, light emitting diodes (LEDs), photoelectric detectors, and outdoor equipment.


2007 ◽  
Vol 134 ◽  
pp. 11-14
Author(s):  
Thierry Salvetat ◽  
Olivier Pollet ◽  
Pascal Besson ◽  
Névine Rochat

RSC Advances ◽  
2014 ◽  
Vol 4 (51) ◽  
pp. 26946-26950 ◽  
Author(s):  
Dae Seok Kim ◽  
Yun Jeong Cha ◽  
Hanim Kim ◽  
Mun Ho Kim ◽  
Yun Ho Kim ◽  
...  

Dual-scale structures showing superhydrophobic characteristics have been fabricated using sublimable smectic liquid crystals.


2018 ◽  
Vol 282 ◽  
pp. 39-42 ◽  
Author(s):  
Sang Woo Lim

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.


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