Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-Based Transparent Resistive Memory Devices

2017 ◽  
Vol 77 (4) ◽  
pp. 155-160 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Bhaskar Pattanayak ◽  
Chun-Chieh Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Hydrogen Peroxide ◽  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

2008 ◽  
Vol 47 (4) ◽  
pp. 2701-2703 ◽  
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
Chen Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Erratum: “Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices”

2017 ◽  
Vol 56 (10) ◽  
pp. 109201
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Hao Tang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

scholarly journals Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

2015 ◽  
Vol 51 (44) ◽  
pp. 9173-9176 ◽  
Author(s):  
Sung Pyo Park ◽  
Doo Hyun Yoon ◽  
Young Jun Tak ◽  
Heesoo Lee ◽  
Hyun Jae Kim
Keyword(s):  
Phase Transition ◽  
Hydrogen Peroxide ◽  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Switching Characteristics

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide.

scholarly journals Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17882-17888 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
The Self ◽  
Memory Devices ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Two resistive memory devices were prepared with different doping concentrations in the silicon bottom electrodes to explore the self-rectifying and nonlinear resistive switching characteristics of Ni/SiNx/p-Si devices.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

2012 ◽  
Vol 10 (1) ◽  
pp. 013102-13105 ◽  
Author(s):  
Jianwei Zhao Jianwei Zhao ◽  
Fengjuan Liu Fengjuan Liu ◽  
Jian Sun Jian Sun ◽  
Haiqin Huang Haiqin Huang ◽  
Zuofu Hu Zuofu Hu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

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