scholarly journals Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17882-17888 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
The Self ◽  
Memory Devices ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Two resistive memory devices were prepared with different doping concentrations in the silicon bottom electrodes to explore the self-rectifying and nonlinear resistive switching characteristics of Ni/SiNx/p-Si devices.

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

2012 ◽  
Vol 10 (1) ◽  
pp. 013102-13105 ◽  
Author(s):  
Jianwei Zhao Jianwei Zhao ◽  
Fengjuan Liu Fengjuan Liu ◽  
Jian Sun Jian Sun ◽  
Haiqin Huang Haiqin Huang ◽  
Zuofu Hu Zuofu Hu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

scholarly journals Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Geetika Khurana ◽  
Nitu Kumar ◽  
Manish Chhowalla ◽  
James F. Scott ◽  
Ram S. Katiyar
Keyword(s):  
Gold Nanoparticles ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Device Fabrication ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Au Nps ◽  
Conducting Path ◽  
Switching Characteristics

Abstract Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

2008 ◽  
Vol 47 (4) ◽  
pp. 2701-2703 ◽  
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
Chen Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Erratum: “Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices”

2017 ◽  
Vol 56 (10) ◽  
pp. 109201
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Hao Tang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

2015 ◽  
Vol 589 ◽  
pp. 188-193 ◽  
Author(s):  
Jongmin Kim ◽  
Duhwan Kim ◽  
Yongcheol Jo ◽  
Jaeseok Han ◽  
Hyeonseok Woo ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Resistive Switching ◽  
Single Layer ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-Based Transparent Resistive Memory Devices

2017 ◽  
Vol 77 (4) ◽  
pp. 155-160 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Bhaskar Pattanayak ◽  
Chun-Chieh Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Hydrogen Peroxide ◽  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics
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