(Invited) Transparent Top Gate Oxide TFT with ITO/Ag/ITO Low Resistance Electrode for the Application to the High Speed Operation Fingerprint Sensor Array in the Touch Panel

2016 ◽  
Vol 75 (10) ◽  
pp. 247-251 ◽  
Author(s):  
Y. Kim ◽  
G.-J. Jeon ◽  
M. K. Lee ◽  
S. H. Lee ◽  
S.-H. K. Park
Keyword(s):  
High Speed ◽  
Sensor Array ◽  
Gate Oxide ◽  
Oxide Tft ◽  
Touch Panel ◽  
Low Resistance ◽  
Fingerprint Sensor

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

scholarly journals Multi-Touch Interaction Generation Device by Spatiotemporally Switching Electrodes

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1475
Author(s):  
Masahiro Okamoto ◽  
Kazuya Murao
Keyword(s):  
High Speed ◽  
High Accuracy ◽  
Conductive Ink ◽  
Control Board ◽  
Touch Panel ◽  
Electrode Size ◽  
Touch Input ◽  
Touch Interaction ◽  
Multiple Electrodes ◽  
Touch Panels

With the spread of devices equipped with touch panels, such as smartphones, tablets, and laptops, the opportunity for users to perform touch interaction has increased. In this paper, we constructed a device that generates multi-touch interactions to realize high-speed, continuous, or hands-free touch input on a touch panel. The proposed device consists of an electrode sheet printed with multiple electrodes using conductive ink and a voltage control board, and generates eight multi-touch interactions: tap, double-tap, long-press, press-and-tap, swipe, pinch-in, pinch-out, and rotation, by changing the capacitance of the touch panel in time and space. In preliminary experiments, we investigated the appropriate electrode size and spacing for generating multi-touch interactions, and then implemented the device. From the evaluation experiments, it was confirmed that the proposed device can generate multi-touch interactions with high accuracy. As a result, tap, press-and-tap, swipe, pinch-in, pinch-out, and rotation can be generated with a success rate of 100%. It was confirmed that all the multi-touch interactions evaluated by the proposed device could be generated with high accuracy and acceptable speed.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

2.1: Invited Paper: 16.9‐Inch Flexible AMOLED Display with High Performance Top Gate Oxide TFT

2021 ◽  
Vol 52 (S2) ◽  
pp. 48-50
Author(s):  
YuanJun Hsu ◽  
Zhenguo Lin ◽  
Yihong Lu ◽  
BaiXiang Han ◽  
Weiran Cao ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Oxide ◽  
Oxide Tft

Novel self-aligned top-gate oxide TFT for AMOLED displays

2012 ◽  
Vol 20 (1) ◽  
pp. 47 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes

1983 ◽  
Author(s):  
H. Yamamoto ◽  
T. Baji ◽  
H. Matsumaru ◽  
Y. Tanaka ◽  
K. Seki ◽  
...  
Keyword(s):  
High Speed ◽  
Sensor Array ◽  
Pin Diodes ◽  
Contact Type

35.3: Distinguished Paper: A Novel Self-Aligned Top-Gate Oxide TFT for AM-OLED Displays

2011 ◽  
Vol 42 (1) ◽  
pp. 479-482 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

2009 ◽  
Vol 255 (17) ◽  
pp. 7831-7833 ◽  
Author(s):  
Santosh M. Bobade ◽  
Ji-Hoon Shin ◽  
Young-Je Cho ◽  
Jung-Sun You ◽  
Duck-Kyun Choi
Keyword(s):  
Room Temperature ◽  
Gate Oxide ◽  
Oxide Tft
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