(Invited) Trench-Gated MOSFET Instability Caused by High Temperature Reverse-Bias Stress

2016 ◽  
Vol 72 (2) ◽  
pp. 199-205
Author(s):  
J. Hao
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Bias Stress

Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

2021 ◽  
Author(s):  
Meng Lu ◽  
Yiqiang Chen ◽  
Min Liao ◽  
Chang Liu ◽  
Shuaizhi Zheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Degradation Mechanism ◽  
Bias Stress ◽  
Gan Hemt

End of life and acceleration modelling for power diodes under high temperature reverse bias stress

2016 ◽  
Vol 64 ◽  
pp. 458-463 ◽  
Author(s):  
O. Schilling ◽  
K. Leitner ◽  
K.-D. Schulze ◽  
F. Umbach
Keyword(s):  
High Temperature ◽  
End Of Life ◽  
Reverse Bias ◽  
Power Diodes ◽  
Bias Stress

scholarly journals Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

2020 ◽  
Vol 31 (12) ◽  
pp. 125203 ◽  
Author(s):  
P Fiorenza ◽  
M S Alessandrino ◽  
B Carbone ◽  
C Di Martino ◽  
A Russo ◽  
...  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Threading Dislocations ◽  
Bias Stress

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress

scholarly journals Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

2020 ◽  
Vol 1004 ◽  
pp. 433-438
Author(s):  
Patrick Fiorenza ◽  
Mario Alessandrino ◽  
Beatrice Carbone ◽  
Clarice Di Martino ◽  
Alfio Russo ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Probe Microscopy ◽  
Reverse Bias ◽  
Dielectric Breakdown ◽  
Threading Dislocation ◽  
Power Mosfets ◽  
Bias Stress ◽  
Local Modification ◽  
Minority Carriers

In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.

Reliability of High Voltage 4H-SiC MOSFET Devices

2006 ◽  
Vol 911 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Sei-Hyung Ryu ◽  
Bradley Heath ◽  
Anant Agarwal ◽  
John Palmour ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Reverse Bias ◽  
Stress Test ◽  
Drain Current ◽  
Gate Oxide ◽  
Bias Stress ◽  
Device Stability ◽  
Device Reliability

AbstractThe commercialization of 4H-SiC MOSFETs will greatly depend on the reliability of gate oxide. Long-term gate oxide reliability and device stability of 1200 V 4H-SiC MOSFETs are being studied, both under the on- and off-states. Device reliability is studied by stressing the device under three conditions: (a) Gate stress - a constant gate voltage of +15 V is applied to the gate at a temperature of 175°C. The forward I-V characteristics and threshold voltage are monitored for device stability, (b) Forward current stress – devices are stressed under a constant drain current of Id = 4 A and Vg = 20 V. The devices were allowed to self-heat to a temperature of Tsink = 125°C and the I-V curves are monitored with time, and (c) High temperature reverse bias testing at 1200 V and 175°C to study the reliability of the devices in the off-state. Our very first measurements on (a) and (b) show very little variation between the pre-stress and post-stress I-V characteristics and threshold voltage up to 1000 hrs of operation at 175°C indicating excellent stability of the MOSFETs in the on-state. In addition, high temperature reverse bias stress test looks very promising with the devices showing very little variation in the reverse leakage current with time.

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