Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress

2004 ◽  
Vol 44 (9-11) ◽  
pp. 1461-1465 ◽  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Bias Stress

Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

2021 ◽  
Author(s):  
Meng Lu ◽  
Yiqiang Chen ◽  
Min Liao ◽  
Chang Liu ◽  
Shuaizhi Zheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Degradation Mechanism ◽  
Bias Stress ◽  
Gan Hemt

End of life and acceleration modelling for power diodes under high temperature reverse bias stress

2016 ◽  
Vol 64 ◽  
pp. 458-463 ◽  
Author(s):  
O. Schilling ◽  
K. Leitner ◽  
K.-D. Schulze ◽  
F. Umbach
Keyword(s):  
High Temperature ◽  
End Of Life ◽  
Reverse Bias ◽  
Power Diodes ◽  
Bias Stress
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