Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS

2005 ◽  
Vol 45 (5-6) ◽  
pp. 994-999 ◽  
Author(s):  
Giacomo Barletta ◽  
Giuseppe Currò
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Reverse Bias ◽  
Defect Band ◽  
Bias Stress

Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

2021 ◽  
Author(s):  
Meng Lu ◽  
Yiqiang Chen ◽  
Min Liao ◽  
Chang Liu ◽  
Shuaizhi Zheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Degradation Mechanism ◽  
Bias Stress ◽  
Gan Hemt

End of life and acceleration modelling for power diodes under high temperature reverse bias stress

2016 ◽  
Vol 64 ◽  
pp. 458-463 ◽  
Author(s):  
O. Schilling ◽  
K. Leitner ◽  
K.-D. Schulze ◽  
F. Umbach
Keyword(s):  
High Temperature ◽  
End Of Life ◽  
Reverse Bias ◽  
Power Diodes ◽  
Bias Stress

scholarly journals Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

2020 ◽  
Vol 31 (12) ◽  
pp. 125203 ◽  
Author(s):  
P Fiorenza ◽  
M S Alessandrino ◽  
B Carbone ◽  
C Di Martino ◽  
A Russo ◽  
...  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Threading Dislocations ◽  
Bias Stress

Time-Dependent Leakage Current of BaSrTiO3 Film under High Temperature Bias Stress

1998 ◽  
Vol 37 (Part 2, No. 10A) ◽  
pp. L1162-L1164 ◽  
Author(s):  
Kikuo Yamabe ◽  
Minoru Inomoto ◽  
Keitaro Imai
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Time Dependent ◽  
Temperature Bias ◽  
Bias Stress

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress

scholarly journals Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

2020 ◽  
Vol 1004 ◽  
pp. 433-438
Author(s):  
Patrick Fiorenza ◽  
Mario Alessandrino ◽  
Beatrice Carbone ◽  
Clarice Di Martino ◽  
Alfio Russo ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Probe Microscopy ◽  
Reverse Bias ◽  
Dielectric Breakdown ◽  
Threading Dislocation ◽  
Power Mosfets ◽  
Bias Stress ◽  
Local Modification ◽  
Minority Carriers

In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.

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