High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET

2014 ◽  
Vol 61 (3) ◽  
pp. 29-37 ◽  
Author(s):  
Y. Nakao ◽  
T. Matsuo ◽  
A. Teramoto ◽  
H. Utsumi ◽  
K. Hashimoto ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
High Selectivity ◽  
Dry Etching

Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

1996 ◽  
Vol 45 (1) ◽  
pp. 22-26 ◽  
Author(s):  
K.M. Chang ◽  
T.H. Yeh ◽  
S.W. Wang ◽  
C.H. Li ◽  
J.Y. Yang
Keyword(s):  
High Selectivity ◽  
Dry Etching

Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching

1996 ◽  
Vol 449 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
R. G. Wilson ◽  
B. L. Chai ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Acid Solutions ◽  
Lattice Constants ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTLiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in a number of acid solutions, including HF, at rates between 150–40,000 Å/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl2/Ar or CH4/H2/Ar under Electron Cyclotron Resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metalorganic/hydride counterparts. Dry etch rates are low ( < 2, 000 Å/min), providing high selectivity (>5) over the nitrides. The incorporation of hydrogen in these materials is also of interest because this could provide a reservoir of hydrogen that may passivate dopants in overlying nitride films. In 2H implanted samples, 50 % of the deuterium is lost by evolution from the surface by annealing at 400 °C for 20 min and all of the deuterium is gone at 700°C. The diffusivity of 2H is ∼10-13 cm2/s at 250°C in LiA1O2, approximately two orders of magnitude higher than in LiGaO2.

Accurate Dry Etching with Fluorinated Gas for Two-dimensional Si Photonic Crystal

2000 ◽  
Vol 637 ◽  
Author(s):  
Chiharu Takahashi ◽  
Jun-Ichi Takahashi ◽  
Masaya Notomi ◽  
Itaru Yokohama
Keyword(s):  
Photonic Crystal ◽  
Room Temperature ◽  
High Selectivity ◽  
Photonic Band Gap ◽  
Electronic Devices ◽  
Dry Etching ◽  
Two Dimensional ◽  
Ecr Plasma ◽  
Etching Mask ◽  
Photonic Band

AbstractAnisortopic Si dry etching is usually carried out with chlorinated gases for electronic devices such as Si-LSIs. We had another look at Si dry etching with fluorinated gases in order to obtain an ideal air hole for two-dimensional Si photonic crystal. We simulated vertical Si etching, and showed the possibility that single crystal Si can be etched vertically with high selectivity to the etching mask using fluorinated gases. We investigated ECR etching with an SF6-CF4 mixture, and vertical Si etching was achieved at room temperature. High Si/Ni selectivity above 100 was also obtained. Two-dimensional Si photonic crystal with a photonic band gap between 1.25 and 1.51 μm was produced using SF6-CF4 ECR plasma and a thin Ni mask.

scholarly journals Novel fabrication of fixed suspended silicon nitride structure for MEMS devices with dry etching

2020 ◽  
Vol 872 ◽  
pp. 012157
Author(s):  
Khawaja Nizammuddin Subhani ◽  
Shubham Khandare ◽  
R C Biradar ◽  
K N Bhat
Keyword(s):  
Silicon Nitride ◽  
Dry Etching ◽  
Mems Devices
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