Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations

2013 ◽  
Vol 58 (6) ◽  
pp. 111-118 ◽  
Author(s):  
H. Cui ◽  
J. Xu ◽  
J. Gao ◽  
J. Xiang ◽  
Y. Lu ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer ◽  
Wet Etch

Impact of TaN as Wet Etch Stop Layer on Device Characteristics for Dual-Metal HKMG Last Integration CMOSFETs

2013 ◽  
Vol 34 (12) ◽  
pp. 1488-1490 ◽  
Author(s):  
Zhaoyun Tang ◽  
Jing Xu ◽  
Hong Yang ◽  
Hushan Cui ◽  
Bo Tang ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer ◽  
Dual Metal ◽  
Wet Etch

Selective Etching of Heavily-Boron-Doped Si Substrate Using Lightly-Boron-Doped Si Epi as an Etch Stop Layer

2015 ◽  
Author(s):  
Valentina Korchnoy
Keyword(s):  
Sample Preparation ◽  
Preparation Technique ◽  
Back Side ◽  
Flip Chips ◽  
Boron Doped ◽  
Sample Preparation Technique ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Optical Probing ◽  
Wet Etch

Abstract A sample preparation technique for flip chips (FC) deprocessing from the back side proposed. The technique uses HNA chemistry (consisting of a mixture of acids: hydrofluoric, nitric and acetic) to wet-etch the heavily-boron-doped Si bulk substrate selectively to the lightly-boron-doped Si epi. The procedure can be used as a FC device sample preparation technique for back-side optical probing and FIB editing.

Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 185-188 ◽  
Author(s):  
Hushan Cui ◽  
Jun Luo ◽  
Jing Xu ◽  
Jianfeng Gao ◽  
Jinjuan Xiang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Wet Etch

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

2003 ◽  
Vol 799 ◽  
Author(s):  
Haruki Yokoyama ◽  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Michio Sato ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Inp Substrates

ABSTRACTThis paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

scholarly journals Maskless lithography using silicon oxide etch-stop layer induced by megahertz repetition femtosecond laser pulses

2011 ◽  
Vol 19 (11) ◽  
pp. 10834 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan
Keyword(s):  
Femtosecond Laser ◽  
Silicon Oxide ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Maskless Lithography ◽  
Etch Stop ◽  
Etch Stop Layer

Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies

2000 ◽  
Author(s):  
B. De Jaeger ◽  
G. Van den bosch ◽  
M. Van Hove ◽  
I. Debusschere ◽  
M. Schaekers ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

2012 ◽  
Vol 41 (5) ◽  
pp. 899-904 ◽  
Author(s):  
Seungyong Jung ◽  
Gela Kipshidze ◽  
Rui Liang ◽  
Sergey Suchalkin ◽  
Leon Shterengas ◽  
...  
Keyword(s):  
Wet Etching ◽  
Etching Technique ◽  
Mid Infrared ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Lateral Mode

Performance and Interface Characterization for Contact Etch Stop Layer–Strained nMOSFET with HfO[sub 2] Gate Dielectrics under Pulsed-IV Measurement

2008 ◽  
Vol 11 (8) ◽  
pp. H230 ◽  
Author(s):  
Woei-Cherng Wu ◽  
Tien-Sheng Chao ◽  
Te-Hsin Chiu ◽  
Jer-Chyi Wang ◽  
Chao-Sung Lai ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Interface Characterization ◽  
Etch Stop ◽  
Etch Stop Layer
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