Structural characterization of tantalum nitride films as wet etch stop layer in advanced multiwork function metal gate MOSFETs

2018 ◽  
Vol 36 (6) ◽  
pp. 062904
Author(s):  
Petra Mennell ◽  
Hamed Parvaneh ◽  
Zeynel Bayindir ◽  
Dong Hun Kang ◽  
Frieder Baumann ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Tantalum Nitride ◽  
Metal Gate ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Wet Etch

Impact of TaN as Wet Etch Stop Layer on Device Characteristics for Dual-Metal HKMG Last Integration CMOSFETs

2013 ◽  
Vol 34 (12) ◽  
pp. 1488-1490 ◽  
Author(s):  
Zhaoyun Tang ◽  
Jing Xu ◽  
Hong Yang ◽  
Hushan Cui ◽  
Bo Tang ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer ◽  
Dual Metal ◽  
Wet Etch

Selective Etching of Heavily-Boron-Doped Si Substrate Using Lightly-Boron-Doped Si Epi as an Etch Stop Layer

2015 ◽  
Author(s):  
Valentina Korchnoy
Keyword(s):  
Sample Preparation ◽  
Preparation Technique ◽  
Back Side ◽  
Flip Chips ◽  
Boron Doped ◽  
Sample Preparation Technique ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Optical Probing ◽  
Wet Etch

Abstract A sample preparation technique for flip chips (FC) deprocessing from the back side proposed. The technique uses HNA chemistry (consisting of a mixture of acids: hydrofluoric, nitric and acetic) to wet-etch the heavily-boron-doped Si bulk substrate selectively to the lightly-boron-doped Si epi. The procedure can be used as a FC device sample preparation technique for back-side optical probing and FIB editing.

Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 185-188 ◽  
Author(s):  
Hushan Cui ◽  
Jun Luo ◽  
Jing Xu ◽  
Jianfeng Gao ◽  
Jinjuan Xiang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Wet Etch

Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue

2012 ◽  
Vol 195 ◽  
pp. 13-16 ◽  
Author(s):  
Farid Sebaai ◽  
Anabela Veloso ◽  
Hiroaki Takahashi ◽  
Antoine Pacco ◽  
Martine Claes ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Process Integration ◽  
Gate Electrode ◽  
Metal Gate ◽  
Poly Silicon ◽  
High K ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Oxide Removal ◽  
In The Beginning

The industry has diverged into two main approaches for high-k and metal gate (HKMG) integration. One is the so called gate-first. The other is gate-last, also called replacement metal gate (RMG) where the gate electrode is deposited after junctions formation and the high-k gate dielectric is deposited in the beginning of the flow (high-k first-RMG) or just prior to gate electrode deposition (high-k last-RMG) [1-. We can distinguish two RMG process flows called either high-k first or high-k last. In RMG high-k first, poly silicon is removed on top of a TiN etch stop layer whereas on high-k last poly silicon is removed on top of a dummy oxide layer. This dummy oxide has also to be removed in order to redeposit a novel high-k and work function metal (Figure 1).

Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations

2013 ◽  
Vol 58 (6) ◽  
pp. 111-118 ◽  
Author(s):  
H. Cui ◽  
J. Xu ◽  
J. Gao ◽  
J. Xiang ◽  
Y. Lu ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer ◽  
Wet Etch

New ultrastructural findings about Borrelia burgdorferi by cryofixation, negative staining, thin sectioning and scanning techniques

1990 ◽  
Vol 48 (3) ◽  
pp. 582-583
Author(s):  
S. F. Hayes ◽  
M. D. Corwin ◽  
T. G. Schwan ◽  
D. W. Dorward ◽  
W. Burgdorfer
Keyword(s):  
Lyme Disease ◽  
Borrelia Burgdorferi ◽  
Structural Characterization ◽  
Negative Staining ◽  
Low Speed ◽  
Thin Sectioning ◽  
Ultrastructural Findings

Characterization of Borrelia burgdorferi strains by means of negative staining EM has become an integral part of many studies related to the biology of the Lyme disease organism. However, relying solely upon negative staining to compare new isolates with prototype B31 or other borreliae is often unsatisfactory. To obtain more satisfactory results, we have relied upon a correlative approach encompassing a variety EM techniques, i.e., scanning for topographical features and cryotomy, negative staining and thin sectioning to provide a more complete structural characterization of B. burgdorferi.For characterization, isolates of B. burgdorferi were cultured in BSK II media from which they were removed by low speed centrifugation. The sedimented borrelia were carefully resuspended in stabilizing buffer so as to preserve their features for scanning and negative staining. Alternatively, others were prepared for conventional thin sectioning and for cryotomy using modified procedures. For thin sectioning, the fixative described by Ito, et al.

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