Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)

2013 ◽  
Vol 53 (2) ◽  
pp. 171-176 ◽  
Author(s):  
W. Ahn ◽  
O. Seok ◽  
M.-W. Ha ◽  
Y.-S. Kim ◽  
M.-K. Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 927-930 ◽  
Author(s):  
Tomonori Nakamura ◽  
Toshiyuki Miyanagi ◽  
Isaho Kamata ◽  
Hidekazu Tsuchida
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Barrier Heights ◽  
Excess Current ◽  
Low Leakage ◽  
Low Leakage Current

We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.

Electrical characterization of two analogous Schottky contacts produced from N-substituted 1,8-naphthalimide

2018 ◽  
Vol 20 (48) ◽  
pp. 30502-30513 ◽  
Author(s):  
Emine Karagöz ◽  
Songül Fiat Varol ◽  
Serkan Sayın ◽  
Ziya Merdan
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Interface States ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs).

Co-Germanide Schottky Contacts on Ge

2007 ◽  
Vol 131-133 ◽  
pp. 107-112 ◽  
Author(s):  
Luc Lajaunie ◽  
Marie-Laure David ◽  
K. Opsomer ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Phase Formation ◽  
Annealing Time ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes ◽  
Trap Concentration

In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influence of annealing time was investigated on both the electrical properties of Co germanide Schottky barrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing times growing or transformation of germanide entities occurs leading to reduction of the trap concentration and therefore the leakage current.

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

2012 ◽  
Vol 21 (1) ◽  
pp. 017103 ◽  
Author(s):  
Zhi-Fang Cao ◽  
Zhao-Jun Lin ◽  
Yuan-Jie Lü ◽  
Chong-Biao Luan ◽  
Ying-Xia Yu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Series Resistance ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

2019 ◽  
Vol 780 ◽  
pp. 476-481 ◽  
Author(s):  
Hong Gu ◽  
Cong Hu ◽  
Jiale Wang ◽  
Youming Lu ◽  
Jin-Ping Ao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
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