Characterization of Random Telegraph Noise in Scaled High- /Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics

2013 ◽  
Vol 52 (1) ◽  
pp. 941-946 ◽  
Author(s):  
M. Li ◽  
R. Wang ◽  
J. Zou ◽  
R. Huang
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
High Metal

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Transistor-level characterization of static random access memory bit failures induced by random telegraph noise

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED05 ◽  
Author(s):  
Tomoko Mizutani ◽  
Takuya Saraya ◽  
Kiyoshi Takeuchi ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs

2018 ◽  
Vol 13 (4) ◽  
pp. 454-457
Author(s):  
Tsung-Hsien Kao ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Metal Gate ◽  
Random Telegraph Noise ◽  
High K ◽  
Telegraph Noise

scholarly journals Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

2015 ◽  
Vol 147 ◽  
pp. 59-62 ◽  
Author(s):  
M.B. Gonzalez ◽  
J. Martin-Martinez ◽  
R. Rodriguez ◽  
M.C. Acero ◽  
M. Nafria ◽  
...  
Keyword(s):  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Noise Characterization

Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate

2005 ◽  
Vol 86 (22) ◽  
pp. 222905 ◽  
Author(s):  
Chao Sung Lai ◽  
Woei Cherng Wu ◽  
Jer Chyi Wang ◽  
Tien sheng Chao
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate
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