Influence of Thermal Stress and Kinetic Bias Stress on the Electrical Performance of Mixed Oxide Thin Film Transistors

2013 ◽  
Vol 50 (8) ◽  
pp. 161-166
Author(s):  
R. N. P. Vemuri ◽  
T. L. Alford
Keyword(s):  
Thin Film ◽  
Thermal Stress ◽  
Mixed Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Bias Stress

scholarly journals Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

2017 ◽  
Author(s):  
Haiting Xie ◽  
Guochao Liu ◽  
Lei Zhang ◽  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Large Field ◽  
Stress Tests ◽  
Amorphous Oxide ◽  
Nitrogen Doped ◽  
Bias Stress

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μFE = 15.0 cm2·V-1·s-1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1×108) and stability (VTH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.

scholarly journals Influence of Extended Bias Stress on the Electrical Parameters of Mixed Oxide Thin Film Transistors

2012 ◽  
Vol 03 (04) ◽  
pp. 295-299 ◽  
Author(s):  
Winnie P. Mathews ◽  
Rajitha N. P. Vemuri ◽  
Terry L. Alford
Keyword(s):  
Thin Film ◽  
Mixed Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Parameters ◽  
Bias Stress

P‐1.11: Effects of Source and Drain Contacts on Electrical Performance of Oxide Thin‐Film Transistors

2021 ◽  
Vol 52 (S2) ◽  
pp. 702-702
Author(s):  
Zhendong Wu ◽  
Hengbo Zhang ◽  
Xiaolong Wang ◽  
Lingyan Liang ◽  
Hongtao Cao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance

scholarly journals Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Xing Zhang ◽  
Yi Wang
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Structure ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Processing Temperature ◽  
Active Layers ◽  
Low Threshold ◽  
Channel Configuration

AbstractIn this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

scholarly journals Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1875
Author(s):  
Hwan-Seok Jeong ◽  
Hyun Seok Cha ◽  
Seong Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Hydroxyl Groups ◽  
Annealing Atmosphere ◽  
Electrical Stability ◽  
Indium Gallium

In this study, we examined the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs). The annealing process was performed at a temperature of 180 °C under N2, O2, or air atmosphere after the deposition of IGTO thin films by direct current magnetron sputtering. The field-effect mobility (μFE) of the N2- and O2-annealed IGTO TFTs was 26.6 cm2/V·s and 25.0 cm2/V·s, respectively; these values were higher than that of the air-annealed IGTO TFT (μFE = 23.5 cm2/V·s). Furthermore, the stability of the N2- and O2-annealed IGTO TFTs under the application of a positive bias stress (PBS) was greater than that of the air-annealed device. However, the N2-annealed IGTO TFT exhibited a larger threshold voltage shift under negative bias illumination stress (NBIS) compared with the O2- and air-annealed IGTO TFTs. The obtained results indicate that O2 gas is the most suitable environment for the heat treatment of IGTO TFTs to maximize their electrical properties and stability. The low electrical stability of the air-annealed IGTO TFT under PBS and the N2-annealed IGTO TFT under NBIS are primarily attributed to the high density of hydroxyl groups and oxygen vacancies in the channel layers, respectively.

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