Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

2013 ◽  
Vol 50 (5) ◽  
pp. 177-186 ◽  
Author(s):  
J. M. Rafi ◽  
J. Vanhellemont ◽  
E. Simoen ◽  
J. Chen ◽  
M. Zabala ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Thermal Donor ◽  
Doped Silicon ◽  
Donor Formation

Thermal donor formation in aluminum doped silicon

1996 ◽  
Vol 36 (1-3) ◽  
pp. 150-153 ◽  
Author(s):  
J.L. Lindström ◽  
T. Hallberg
Keyword(s):  
Thermal Donor ◽  
Doped Silicon ◽  
Donor Formation

Thermal Donor Formation in Boron Doped Silicon

1991 ◽  
Vol 38-41 ◽  
pp. 613-618 ◽  
Author(s):  
M. Claybourn ◽  
R.C. Newman
Keyword(s):  
Thermal Donor ◽  
Boron Doped ◽  
Doped Silicon ◽  
Donor Formation

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Compressive Stress ◽  
Reference Temperature ◽  
Enhancement Effect ◽  
Shallow Acceptor ◽  
Thermal Donor ◽  
Compressive Stresses ◽  
Heat Treated ◽  
Donor Formation ◽  
New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

1993 ◽  
Vol 143-147 ◽  
pp. 963-968 ◽  
Author(s):  
S.A. McQuaid ◽  
Charalamos A. Londos ◽  
M.J. Binns ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Loss ◽  
Thermal Donor ◽  
Donor Formation ◽  
Kinetics Of

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Sign in / Sign up

Export Citation Format

Share Document