Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon

1992 ◽  
Vol 46 (7) ◽  
pp. 4312-4315 ◽  
Author(s):  
W. Götz ◽  
G. Pensl ◽  
W. Zulehner
Keyword(s):  
Thermal Donor ◽  
Oxygen Donor ◽  
Donor Formation ◽  
Donor Species

scholarly journals Formation Kinetics of Thermal Donors in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Jeffrey T. Borenstein ◽  
David Peak ◽  
James W. Corbett
Keyword(s):  
Electronic Absorption Spectra ◽  
Reaction Rates ◽  
Active Species ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Formation Kinetics ◽  
Initial Oxygen ◽  
Donor Formation ◽  
Kinetics Of ◽  
Donor Species

ABSTRACTThe kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a simple model based on the work of Suezawa and Sumino which derives forward and reverse reaction rates for each electrically active species from the general features of the infrared electronic absorption spectra. The model, which is independent of the chemical nature of the thermal donor core, assumes that all thermal donors beyond the first donor species are chemically stable at the donor formation temperature, and approximates the reactions for species smaller than the first thermal donor as being in chemical equilibrium. The model is shown to be consistent with both sets of the available IR spectra of thermal donors (Oeder-Wagner and Suezawa-Sumino) when differences in the annealing temperature and initial oxygen concentration are taken into account.

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Compressive Stress ◽  
Reference Temperature ◽  
Enhancement Effect ◽  
Shallow Acceptor ◽  
Thermal Donor ◽  
Compressive Stresses ◽  
Heat Treated ◽  
Donor Formation ◽  
New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

1993 ◽  
Vol 143-147 ◽  
pp. 963-968 ◽  
Author(s):  
S.A. McQuaid ◽  
Charalamos A. Londos ◽  
M.J. Binns ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Loss ◽  
Thermal Donor ◽  
Donor Formation ◽  
Kinetics Of

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

2020 ◽  
pp. 2000587
Author(s):  
Rabin Basnet ◽  
Hang Sio ◽  
Manjula Siriwardhana ◽  
Fiacre E. Rougieux ◽  
Daniel Macdonald
Keyword(s):  
Defect Formation ◽  
Silicon Wafers ◽  
Thermal Donor ◽  
Donor Formation

Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen

1999 ◽  
Vol 85 (12) ◽  
pp. 8054-8059 ◽  
Author(s):  
D. Åberg ◽  
M. K. Linnarsson ◽  
B. G. Svensson ◽  
T. Hallberg ◽  
J. L. Lindström
Keyword(s):  
Thermal Donor ◽  
Ambient Oxygen ◽  
Donor Formation

Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation
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