Metal–Insulator Transition in Diluted Magnetic Semiconductor

2003 ◽  
Vol 72 (Suppl.A) ◽  
pp. 211-212 ◽  
Author(s):  
I. Kanazawa
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Diluted Magnetic

scholarly journals Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

2008 ◽  
Vol 1118 ◽  
Author(s):  
R. da Silva Neves ◽  
A. Ferreira da Silva ◽  
R. Kishore
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Critical Concentration ◽  
Mean Field ◽  
Magnetic Semiconductor ◽  
Impurity Band ◽  
Insulator Transition ◽  
Ferromagnetic Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Mean

ABSTRACTThe study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

Magnetic and Transport Properties of Ga1-xMnxAs, a New III-V Diluted Magnetic Semiconductor

1997 ◽  
Vol 475 ◽  
Author(s):  
A. Van Esch ◽  
L. Van Bocksta ◽  
J. De Boeck ◽  
G. Verbanck ◽  
A. Van Steenbergen ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Ordering ◽  
Strongly Correlated ◽  
Metal Insulator ◽  
Transport Behaviour ◽  
Diluted Magnetic ◽  
Mn Concentration ◽  
Mn Concentrations ◽  
Strong Antiferromagnetic Interaction

ABSTRACTGa1-xMnxAs is a new III-V diluted magnetic semiconductor that can be grown by MBE with Mn concentrations up to x ∼ 0.09. Below a critical temperature Tc, determined by the Mn concentration (about 50 K for x = 0.05) the material becomes ferromagnetic. This is attributed to the magnetic long-range order of Mn-hole complexes, the latter being the result of the strong antiferromagnetic interaction between the holes and Mn 3d spins. Transport and magnetic properties of the Ga1-xMnxAs system are strongly correlated. Above Tc, all samples show transport behaviour characteristic for materials near the metal insulator transition. Below Tc, resistivity decreases as the magnetic ordering sets in. When the magnetisation has reached its saturation value (below ∼ 20 K), variable range hopping is the main transport mechanism. Also, a negative magnetoresistance is observed below Tc.

The metal insulator transition in the magnetic semiconductor: Gd3−xvxS4(invited; abstract)

1984 ◽  
Vol 55 (6) ◽  
pp. 2317-2317 ◽  
Author(s):  
S. von Molnar ◽  
F. Holtzberg ◽  
A. Briggs ◽  
J. Flouquet ◽  
G. Remenyi
Keyword(s):  
Magnetic Semiconductor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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