Ferromagnetism and the metal-insulator transition in the magnetic semiconductor system FexMn1−x S

1998 ◽  
Vol 40 (2) ◽  
pp. 250-251 ◽  
Author(s):  
G. V. Loseva ◽  
L. I. Ryabinkina ◽  
A. D. Balaev
Keyword(s):  
Magnetic Semiconductor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Semiconductor System

scholarly journals Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

2008 ◽  
Vol 1118 ◽  
Author(s):  
R. da Silva Neves ◽  
A. Ferreira da Silva ◽  
R. Kishore
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Critical Concentration ◽  
Mean Field ◽  
Magnetic Semiconductor ◽  
Impurity Band ◽  
Insulator Transition ◽  
Ferromagnetic Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Mean

ABSTRACTThe study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

The metal insulator transition in the magnetic semiconductor: Gd3−xvxS4(invited; abstract)

1984 ◽  
Vol 55 (6) ◽  
pp. 2317-2317 ◽  
Author(s):  
S. von Molnar ◽  
F. Holtzberg ◽  
A. Briggs ◽  
J. Flouquet ◽  
G. Remenyi
Keyword(s):  
Magnetic Semiconductor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

METAL–INSULATOR TRANSITION IN A QUASI-LOW-DIMENSIONAL SEMICONDUCTOR SYSTEM

2003 ◽  
Vol 17 (30) ◽  
pp. 5725-5735
Author(s):  
A. JOHN PETER
Keyword(s):  
Hubbard Model ◽  
Critical Concentration ◽  
Shallow Donor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mass Approximation ◽  
Semiconductor System ◽  
Low Dimensional ◽  
The Relationship

Metal–Insulator transition using exact quasi dielectric functions is investigated for a shallow donor in an isolated well of GaAs/Ga 1-x Al s As superlattice system within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and the donor concentration suggests that no transition is possible below a well width of 50 Å supporting the scaling theory of localization. The effects of Anderson localization, exchange and correlation in the Hubbard model are included in a simple way. The relationship between the present model and the Mott criterion in terms of Hubbard model is also brought out. The critical concentration is enhanced when a random distribution of impurities is considered. Results are compared with the existing data available and discussed in the light of existing literature.

Fermi-surface reconstruction close to a pressure-induced metal-insulator transition

2004 ◽  
Vol 114 ◽  
pp. 277-281 ◽  
Author(s):  
J. Wosnitza ◽  
J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
J. A. Schlueter ◽  
...  
Keyword(s):  
Fermi Surface ◽  
Surface Reconstruction ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Fermi Surface Reconstruction
Sign in / Sign up

Export Citation Format

Share Document