Electron spin flip Raman spectroscopy of the diluted magnetic semiconductor Zn1-xMnxSe below the metal-insulator transition

2016 ◽  
Vol 13 (7-9) ◽  
pp. 542-545
Author(s):  
A. G. Knapp ◽  
S. Petznick ◽  
F. Jansson ◽  
M. Wiemer ◽  
M. Hetterich ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spin Flip ◽  
Diluted Magnetic

Raman Spectroscopy of A Novel Diluted Magnetic Semiconductor: Cubic Cd1−xMnxSe.

1989 ◽  
Vol 161 ◽  
Author(s):  
R. G. Alonso ◽  
E.-K. Suh ◽  
H. Pascher ◽  
E. Oh ◽  
A. K. Ramdas ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Zinc Blende ◽  
Spin Flip ◽  
Mode Behavior ◽  
Diluted Magnetic ◽  
Photoluminescence Studies ◽  
Bound Electrons ◽  
Interaction Characteristic

ABSTRACTIn contrast to the bulk diluted magnetic semiconductor (DMS) Cd1−xMnxSe which occurs with the wurtzite structure, its epilayers grown on (001) GaAs substrate by Molecular Beam Epitaxy exhibit the cubic zinc-blende structure. Raman spectroscopy and photoluminescence studies on this novel DMS show (1) a “two-mode” behavior of the zone center optical phonons, (2) the Raman line associated with the spin-flip in the Zeeman split S = 5/2 ground state of Mn2+, and (3) large Raman shifts associated with the spin-flip of donor-bound electrons. The large magnetic field dependence in (3) with saturation at high fields and low temperature shows that the s-d exchange interaction characteristic of DMS's is also manifested strikingly in the zinc-blende phase of Cd1−xMnxSe.

Strong and weak electron spin-orbit scattering near the metal-insulator transition

1985 ◽  
Vol 31 (7) ◽  
pp. 4715-4717 ◽  
Author(s):  
M. Osofsky ◽  
H. Tardy ◽  
M. LaMadrid ◽  
J. M. Mochel
Keyword(s):  
Electron Spin ◽  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Weak Electron

scholarly journals Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

2008 ◽  
Vol 1118 ◽  
Author(s):  
R. da Silva Neves ◽  
A. Ferreira da Silva ◽  
R. Kishore
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Critical Concentration ◽  
Mean Field ◽  
Magnetic Semiconductor ◽  
Impurity Band ◽  
Insulator Transition ◽  
Ferromagnetic Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Mean

ABSTRACTThe study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

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