Erratum: “Hall Effect and Electrical Conductivity of Lead Selenide”

1955 ◽  
Vol 10 (1) ◽  
pp. 83-83
Author(s):  
Eiji Hirahara ◽  
Miyuki Murakami
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Lead Selenide

Hall Effect and Electrical Conductivity of Lead Selenide

1954 ◽  
Vol 9 (5) ◽  
pp. 671-681 ◽  
Author(s):  
Eiji Hirahara ◽  
Miyuki Murakami
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Lead Selenide

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

12. The hall effect, magnetoresistance and electrical conductivity of glassy carbon

Carbon ◽  
1982 ◽  
Vol 20 (2) ◽  
pp. 126
Author(s):  
Dennis F. Baker ◽  
Robert H. Bragg
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Glassy Carbon

The characterization of pure and niobium-doped crystals of strontium titanate using Hall, electrical conductivity, and optical absorption data

1978 ◽  
Vol 56 (4) ◽  
pp. 453-467 ◽  
Author(s):  
G. Perluzzo ◽  
J. Destry
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Optical Absorption ◽  
Hall Effect ◽  
Strontium Titanate ◽  
Defect States ◽  
Absorption Data ◽  
Niobium Doped ◽  
Hall Effect Measurements

A description is given of the heat treatment, under controlled conditions, of crystals of strontium titanate, both pure and niobium-doped, and of the effect of this treatment on the defect states in this material. Our analysis is based on evaluation of the results of electrical conductivity and Hall effect measurements, and those of optical absorption.

Investigation of Electrical Conductivity and Hall Effect in GaSe Single Crystals

1966 ◽  
Vol 17 (2) ◽  
pp. K237-K240 ◽  
Author(s):  
F. I. Ismailov ◽  
G. A. Akhundov ◽  
O. R. Vernich
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Single Crystals
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