The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates

2011 ◽  
Vol 50 (8) ◽  
pp. 080201 ◽  
Author(s):  
Tom J. Badcock ◽  
Rui Hao ◽  
Michelle A. Moram ◽  
Menno J. Kappers ◽  
Phil Dawson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Sapphire Substrates

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown onr-Plane Sapphire Substrates

2011 ◽  
Vol 50 (8R) ◽  
pp. 080201
Author(s):  
Tom J. Badcock ◽  
Rui Hao ◽  
Michelle A. Moram ◽  
Menno J. Kappers ◽  
Phil Dawson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Sapphire Substrates

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

2009 ◽  
Vol 105 (6) ◽  
pp. 063105 ◽  
Author(s):  
C. H. Chiu ◽  
S. Y. Kuo ◽  
M. H. Lo ◽  
C. C. Ke ◽  
T. C. Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates

Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

1997 ◽  
Vol 175-176 ◽  
pp. 1167-1172 ◽  
Author(s):  
R. Hey ◽  
I. Gorbunova ◽  
M. Ramsteiner ◽  
M. Wassermeier ◽  
L. Däweritz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Growth Mode ◽  
Single Quantum

The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates

2011 ◽  
Vol 208 (7) ◽  
pp. 1529-1531 ◽  
Author(s):  
T. J. Badcock ◽  
R. Hao ◽  
M. A. Moram ◽  
P. Dawson ◽  
M. J. Kappers ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Sapphire Substrates ◽  
Indium Concentration

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

2014 ◽  
Vol 11 (3-4) ◽  
pp. 750-753 ◽  
Author(s):  
Matthew J. Davies ◽  
Philip Dawson ◽  
Fabien C.-P. Massabuau ◽  
Fabrice Oehler ◽  
Rachel A. Oliver ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

2004 ◽  
Vol 37 (3) ◽  
pp. 391-394 ◽  
Author(s):  
J. C. Zhang ◽  
J. F. Wang ◽  
Y. T. Wang ◽  
M. Wu ◽  
J. P. Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Structural Defects ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Edge Dislocations

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ω scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as non-radiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

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