The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

2014 ◽  
Vol 11 (3-4) ◽  
pp. 750-753 ◽  
Author(s):  
Matthew J. Davies ◽  
Philip Dawson ◽  
Fabien C.-P. Massabuau ◽  
Fabrice Oehler ◽  
Rachel A. Oliver ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films

2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 6823-6826 ◽  
Author(s):  
Jyh-Rong Gong ◽  
Su-Fen Tseng ◽  
Cheng-Wei Huang ◽  
Yu-Li Tsai ◽  
Wei-Tsai Liao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Threading Dislocation Density

High Efficiency Uv Emitter Using High Quality GaN/AlxGa1−xN Multi-Quantum Well Active Layer

2000 ◽  
Vol 639 ◽  
Author(s):  
M. Iwaya ◽  
S. Terao ◽  
T. Ukai ◽  
R. Nakamura ◽  
S. Kamiyama ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Threading Dislocation ◽  
Light Emitting ◽  
Si Doping ◽  
Threading Dislocation Density ◽  
Pl Intensity ◽  
Multi Quantum Well

ABSTRACTWe investigated temperature dependence of the photoluminescence (PL) efficiency of GaN/Al0.08Ga0.92N multi-quantum wells (MQWs) with variations of Si-doping condition and threading dislocation density. Si-doping in the GaN/Al0.08Ga0.92N MQWs, especially in the barrier layer improves the PL efficiency. In addition, reduction of threading dislocation density also improves the PL intensity. The PL intensity of the GaN/Al0.08Ga0.92N MQW is drastically increased at least by a factor of 40, by a combination of the Si-doping and reduction of threading dislocation density. We fabricated a light emitting diode (LED) emitting at 357 nm using such a GaN/Al0.08Ga0.92N MQWs. Electro-luminescence intensity from the region with threading dislocation density of less than 108 cm−2 was much larger than that from the region with threading dislocation density of 6×109 cm−2.

High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner
Keyword(s):  
Solar Cells ◽  
Active Region ◽  
Dislocation Density ◽  
Dark Current ◽  
Degradation Mechanism ◽  
Control Cell ◽  
High Irradiance ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Degradation Studies

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction

2015 ◽  
Vol 213 (1) ◽  
pp. 96-101
Author(s):  
G. Calabrese ◽  
S. Baricordi ◽  
P. Bernardoni ◽  
D. De Salvador ◽  
M. Ferroni ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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