The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates

2011 ◽  
Vol 208 (7) ◽  
pp. 1529-1531 ◽  
Author(s):  
T. J. Badcock ◽  
R. Hao ◽  
M. A. Moram ◽  
P. Dawson ◽  
M. J. Kappers ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Sapphire Substrates ◽  
Indium Concentration

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown onr-Plane Sapphire Substrates

2011 ◽  
Vol 50 (8R) ◽  
pp. 080201
Author(s):  
Tom J. Badcock ◽  
Rui Hao ◽  
Michelle A. Moram ◽  
Menno J. Kappers ◽  
Phil Dawson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Sapphire Substrates

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

2009 ◽  
Vol 105 (6) ◽  
pp. 063105 ◽  
Author(s):  
C. H. Chiu ◽  
S. Y. Kuo ◽  
M. H. Lo ◽  
C. C. Ke ◽  
T. C. Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates

2011 ◽  
Vol 50 (8) ◽  
pp. 080201 ◽  
Author(s):  
Tom J. Badcock ◽  
Rui Hao ◽  
Michelle A. Moram ◽  
Menno J. Kappers ◽  
Phil Dawson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Sapphire Substrates

Growth and optical properties of a-plane AlN and Al rich AlN/AlxGa1–xN quantum wells grown on r-plane sapphire substrates

2008 ◽  
Vol 5 (6) ◽  
pp. 1568-1570
Author(s):  
T. Al Tahtamouni ◽  
A. Sedhain ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Sapphire Substrates

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

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