Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases

Takafumi Uesawa; Masayuki Yamada; Yasuyuki Miyamoto; Kazuhito Furuya

doi:10.1143/jjap.49.024302

Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024302 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024302 ◽

Cited By ~ 3

Author(s):

Takafumi Uesawa ◽

Masayuki Yamada ◽

Yasuyuki Miyamoto ◽

Kazuhito Furuya

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Monte Carlo Analysis ◽

Bipolar Transistors ◽

Transit Times

Download Full-text

Ensemble Monte Carlo analysis of self-heating effects in graded heterojunction bipolar transistors

Journal of Applied Physics ◽

10.1063/1.366911 ◽

1998 ◽

Vol 83 (4) ◽

pp. 1869-1877 ◽

Cited By ~ 2

Author(s):

T. Kumar ◽

M. Cahay ◽

K. Roenker

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Monte Carlo Analysis ◽

Bipolar Transistors ◽

Ensemble Monte Carlo ◽

Self Heating ◽

Heating Effects

Download Full-text

Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies

Journal of Applied Physics ◽

10.1063/1.1384850 ◽

2001 ◽

Vol 90 (3) ◽

pp. 1582-1588 ◽

Cited By ~ 14

Author(s):

M. J. Martı́n-Martı́nez ◽

S. Pérez ◽

D. Pardo ◽

T. González

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Monte Carlo Analysis ◽

Bipolar Transistors ◽

Bipolar Junction Transistors ◽

Radio Frequencies

Download Full-text

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.7355 ◽

1988 ◽

Vol 35 (10) ◽

pp. 1573-1579 ◽

Cited By ~ 27

Author(s):

P.I. Rockettt

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Monte Carlo Study ◽

Bipolar Transistors ◽

Velocity Overshoot ◽

Collector Region ◽

High Frequency Performance

Download Full-text

MONTE CARLO SIMULATION FOR VELOCITY OVERSHOOT EFFECTS IN HETEROJUNCTION BIPOLAR TRANSISTORS

Computer Aided Innovation of New Materials ◽

10.1016/b978-0-444-88864-8.50159-x ◽

1991 ◽

pp. 749-752

Author(s):

Masaaki TOMIZAWA ◽

Hideaki TANIYAMA ◽

Tomofumi FURUTA ◽

Akira YOSHII

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Velocity Overshoot

Download Full-text

Monte-Carlo Study Of Ballistic Transport In Heterojunction Bipolar Transistors (HJBTs) And In High Electron Mobility Transistors (HEMTs)

10.1117/12.940929 ◽

1988 ◽

Cited By ~ 1

Author(s):

J. L. Pelouard ◽

R. Castagne ◽

P. Hesto

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Electron Mobility ◽

Ballistic Transport ◽

Monte Carlo Study ◽

High Electron Mobility Transistors ◽

Bipolar Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/edl.1984.25947 ◽

1984 ◽

Vol 5 (9) ◽

pp. 362-364 ◽

Cited By ~ 53

Author(s):

K. Tomizawa ◽

Y. Awano ◽

N. Hashizume

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

Download Full-text

Full band ensemble monte carlo simulations for reliability investigation of highvoltage single & double heterojunction bipolar transistors for military and base station applications including a proposed high breakdown composite collector design

[Reliability of Compound Semiconductors] ROCS Workshop, 2005. ◽

10.1109/rocs.2005.201559 ◽

2005 ◽

Author(s):

S. Madra

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Heterojunction Bipolar Transistors ◽

Base Station ◽

Bipolar Transistors ◽

Ensemble Monte Carlo ◽

Full Band ◽

Double Heterojunction

Download Full-text

Monte Carlo modelling of heterojunction bipolar transistors

10.1049/ic:19951485 ◽

1995 ◽

Author(s):

R.A. Abram

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

Download Full-text

Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.137304 ◽

1992 ◽

Vol 39 (6) ◽

pp. 1273-1281 ◽

Cited By ~ 18

Author(s):

J. Hu ◽

D. Pavlidis ◽

K. Tomizawa

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Monte Carlo Studies ◽

Emitter Junction

Download Full-text

Monte Carlo modelling of hot-electron relaxation in the base region of AlInAs/GaInAs heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/9/3/013 ◽

1994 ◽

Vol 9 (3) ◽

pp. 329-332

Author(s):

G Khrenov ◽

V Ryzhii ◽

S Kartashov

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Hot Electron ◽

Base Region ◽

Electron Relaxation

Download Full-text