Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies

2001 ◽  
Vol 90 (3) ◽  
pp. 1582-1588 ◽  
Author(s):  
M. J. Martı́n-Martı́nez ◽  
S. Pérez ◽  
D. Pardo ◽  
T. González
Keyword(s):  
Monte Carlo ◽  
Heterojunction Bipolar Transistors ◽  
Monte Carlo Analysis ◽  
Bipolar Transistors ◽  
Bipolar Junction Transistors ◽  
Radio Frequencies

Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs

2000 ◽  
Vol 639 ◽  
Author(s):  
K. P. Lee ◽  
A. P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
J. Han ◽  
...  
Keyword(s):  
Contact Area ◽  
Heterojunction Bipolar Transistors ◽  
Series Resistance ◽  
Dry Etching ◽  
Bipolar Transistors ◽  
Fabrication Process ◽  
Device Performance ◽  
Bipolar Junction Transistors ◽  
Dielectric Spacer ◽  
Base Contact

ABSTRACTThe development of a self-aligned fabrication process for small emitter contact area (2×4 um2) GaN/AlGaN heterojunction bipolar transistors and GaN bipolar junction transistors is described. The process features dielectric-spacer sidewalls, low damage dry etching and selected-area regrowth of p-GaAs(C) on the base contact or n-GaN/AlGaN on the emitter contact. Series resistance effects are still found to influence the device performance.

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