Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties

1990 ◽  
Vol 56 (3) ◽  
pp. 233-235 ◽  
Author(s):  
C. Deparis ◽  
J. Massies ◽  
G. Neu
Keyword(s):  
Electron Diffraction ◽  
Quantum Wells ◽  
Photoluminescence Properties ◽  
Diffraction Intensity ◽  
Reflection Electron Diffraction

Analysis of electron-diffraction intensity profiles using a photodiode-array detection system

1983 ◽  
Vol 41 ◽  
pp. 322-323
Author(s):  
J. B. Warren
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Detection System ◽  
High Energy ◽  
Photographic Emulsion ◽  
Diffraction Intensity ◽  
Silicon Photodiode ◽  
Photodiode Array Detection ◽  
Analog To Digital ◽  
Photodiode Array

Electron diffraction intensity profiles have been used extensively in studies of polycrystalline and amorphous thin films. In previous work, diffraction intensity profiles were quantitized either by mechanically scanning the photographic emulsion with a densitometer or by using deflection coils to scan the diffraction pattern over a stationary detector. Such methods tend to be slow, and the intensities must still be converted from analog to digital form for quantitative analysis. The Instrumentation Division at Brookhaven has designed and constructed a electron diffractometer, based on a silicon photodiode array, that overcomes these disadvantages. The instrument is compact (Fig. 1), can be used with any unmodified electron microscope, and acquires the data in a form immediately accessible by microcomputer.Major components include a RETICON 1024 element photodiode array for the de tector, an Analog Devices MAS-1202 analog digital converter and a Digital Equipment LSI 11/2 microcomputer. The photodiode array cannot detect high energy electrons without damage so an f/1.4 lens is used to focus the phosphor screen image of the diffraction pattern on to the photodiode array.

EXTRAX: anImageJplug-in for electron diffraction intensity extraction

2009 ◽  
Vol 43 (1) ◽  
pp. 191-195 ◽  
Author(s):  
V. Dorcet ◽  
X. Larose ◽  
C. Fermin ◽  
M. Bissey ◽  
P. Boullay
Keyword(s):  
Image Processing ◽  
Electron Diffraction ◽  
Public Domain ◽  
High Order ◽  
Diffraction Spot ◽  
Two Dimensional ◽  
Diffraction Intensity ◽  
Dimensional Lattice ◽  
Peak Location ◽  
Modulation Vector

A plug-in (EXTRAX) has been developed forImageJ– a public domain Java-based program widely used for image processing and analysis in microscopy. This plug-in allows the extraction and measurement of intensities from electron diffraction spot patterns with a semi-automatic peak location based on a two-dimensional lattice given by the user. It is also possible to take into account supplementary spots originating from high-order Laue zones and/or the existence of a modulation vector.

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