Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric Acid

2006 ◽  
Vol 45 (4A) ◽  
pp. 2408-2411
Author(s):  
Naomi Mizuta ◽  
Satoru Watanabe
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Silicon Substrate ◽  
Hydrofluoric Acid ◽  
Chemical Structure ◽  
Hydrogenation Reaction

Stress Assisted Controlled Fabrication of Nano Channels and Their Flow Characteristics

2004 ◽  
Author(s):  
Sathyanarayanan Mani ◽  
Taher M. Saif
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Silicon Dioxide ◽  
Silicon Substrate ◽  
Flow Characteristics ◽  
Square Root ◽  
Proportionality Constant ◽  
Flow Through ◽  
Oxide Stress ◽  
Stress Raisers

A method to fabricate nano channels narrower than 50nm without the need for any nano lithography is presented. The nano channels are formed by cracking a thin film of silicon dioxide on a silicon substrate by residual stress alone. However, for controlled initiation of cracks on oxide, stress raisers are planted on a silicon substrate by deep RIE. These channels are used to study capillary driven fluid flow through nanochannels. Experimental analysis suggests that the flow rate is inversely proportional to the square root of time, which is in agreement with the theoretical model. From the theoretical plot that fits the experimental data the value of the proportionality constant is determined. From this value it is possible to back calculate the meniscus contact angle if we know the surface energy of the fluid or vice versa.

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Influence of the silicon substrate thickness on the response of thin film pyroelectric detectors

2002 ◽  
Vol 46 (8) ◽  
pp. 1155-1161 ◽  
Author(s):  
Jong Soo Ko ◽  
Weiguo Liu ◽  
Weiguang Zhu ◽  
Byung Man Kwak
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Substrate Thickness ◽  
Pyroelectric Detectors

Experimental Measurement and Analysis of Microelectronics Application Polymer Materials Properties

1992 ◽  
Vol 264 ◽  
Author(s):  
Y.H. Jeng ◽  
Mirng-Ji Lii
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Silicon Substrate ◽  
Coupling Effect ◽  
Measurement Techniques ◽  
Epoxy Adhesive ◽  
Polymer Materials ◽  
Fea Model ◽  
Curvature Measurement ◽  
Substrate Curvature

AbstractA laser based surface scanning technique was utilized to measure the polyimide coated silicon wafer curvature resulting from thermal cycling and mismatch, Meanwhile, mechanical properties of polyimide thin film were characterized by DMA, TMA and tensile test. Based on the obtained material properties, A FEA model was developed to analyze the experimental results -reasonable correlation was obtained.Similar approaches were taken one step further in the MCM silicon substrate curvature measurement. In a MCM package with silicon substrate, epoxy adhesive, and ceramic package, substrate warpage was developed in a thermal cycle due to thermal mismatch between the substrate and the package and coupling effect linked by epoxy adhesive. Three different substrate curvature measurement techniques were applied to identify the substrate curvature and epoxy thin film properties were also well characterized. A 3D FEA model incorporating with the epoxy material properties was developed to analyze the substrate warpage and investigate an optimal package design.

scholarly journals Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate

2017 ◽  
Vol 17 (2) ◽  
pp. 36
Author(s):  
Dadin Mahmudin ◽  
Shobih ◽  
Pamungkas Daud ◽  
Yusuf Nur Wijayanto
Keyword(s):  
Silicon Dioxide ◽  
Optical Fibers ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Ultra Violet ◽  
Long Distance ◽  
Distance Communication ◽  
Paper Fabrication ◽  
Insertion Losses ◽  
Planar Optical Waveguides

Optical waveguides are important for guiding lightwave from a place to other places. Propagation and insertion losses of the optical waveguides should be considered to be in low values. Recently, optical waveguides with circular structures, which are optical fibers, are used widely for guiding lightwave in long-distance optical communication with very low propagation and insertion losses. Simultaneously, optical waveguides with planar structure are also developed for short distance communication in optical devices. We have reported design and analysis of the planar optical waveguides. In this paper, fabrication of planar optical waveguides using a polyimide material on thin silicon dioxide combined with the silicon substrate is reported. The polyimide material is used for the core of the optical waveguides. The silicon dioxide located on the silicon substrate and the air is used for cladding of the optical waveguides. Fabrication of the optical waveguides such as oxidation, photoresist coating, masking, ultra-violet exposure, and etching was done. The fabricated optical waveguides were characterized physically using a standard microscope and scanning electron microscope (SEM). The fabrication processes and characterization results are reported and discussed in detail.

The self‐biased heterojunction effect of ferroelectric thin film on silicon substrate

1990 ◽  
Vol 67 (6) ◽  
pp. 2985-2991 ◽  
Author(s):  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Ferroelectric Thin Film ◽  
The Self
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