Annealing Effect on Enlargement of Grain Size in Nanocrystalline Silicon Films Deposited by Silicon Evaporation with Oxygen and Argon Radicals

2005 ◽  
Vol 44 (1B) ◽  
pp. 701-704 ◽  
Author(s):  
Kazuhiro Nakamura ◽  
Makoto Hirata ◽  
Katsuhiro Yokota
Keyword(s):  
Grain Size ◽  
Nanocrystalline Silicon ◽  
Annealing Effect ◽  
Silicon Films ◽  
Nanocrystalline Silicon Films

Influence of grain size on ultrafast carrier dynamics in thin nanocrystalline silicon films

2007 ◽  
Vol 90 (19) ◽  
pp. 191114 ◽  
Author(s):  
Emmanouil Lioudakis ◽  
Andreas Othonos ◽  
A. G. Nassiopoulou ◽  
Ch. B. Lioutas ◽  
N. Frangis
Keyword(s):  
Grain Size ◽  
Nanocrystalline Silicon ◽  
Carrier Dynamics ◽  
Silicon Films ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz

2004 ◽  
Vol 455-456 ◽  
pp. 532-535 ◽  
Author(s):  
Leandro Raniero ◽  
Rodrigo Martins ◽  
Hugo Águas ◽  
S. Zang ◽  
Isabel Ferreira ◽  
...  
Keyword(s):  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Nanocrystalline Silicon Films

Light-induced metastability in thin nanocrystalline silicon films

2009 ◽  
Vol 89 (28-30) ◽  
pp. 2531-2539 ◽  
Author(s):  
M. Bauza ◽  
N.P. Mandal ◽  
A. Ahnood ◽  
A. Sazonov ◽  
A. Nathan
Keyword(s):  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Nanocrystalline Silicon Films
Sign in / Sign up

Export Citation Format

Share Document