Electro-Mechanical Properties of Metal–Insulator–Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 533-540 ◽  
Author(s):  
Sung Kyu Park ◽  
Jeong In Han ◽  
Won Keun Kim ◽  
Sung Jei Hong ◽  
Min Gi Kwak ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Polymer Substrate ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Low Temperature Process

Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal–insulator–metal capacitor

2010 ◽  
Vol 518 (18) ◽  
pp. 5272-5277 ◽  
Author(s):  
Ming-Yen Li ◽  
Bin-Siang Tsai ◽  
Pei-Chuen Jiang ◽  
Hsiao-Che Wu ◽  
Yung-Hsien Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Insulator ◽  
Structure And Property ◽  
Metal Insulator Metal ◽  
Property Changes

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process
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