Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1309-L1311 ◽  
Author(s):  
Nobuki Morooka ◽  
Katsuhiro Uesugi ◽  
Ikuo Suemune
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation ◽  
Metalorganic Molecular Beam Epitaxy

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

1999 ◽  
Vol 74 (23) ◽  
pp. 3516-3518 ◽  
Author(s):  
C. Jin ◽  
Y. Qiu ◽  
S. A. Nikishin ◽  
H. Temkin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation ◽  
Metalorganic Molecular Beam Epitaxy

Decomposition Mechanism of Triethyl-Arsenic on a GaAs Surface for Metalorganic Molecular-Beam Epitaxy: Role of Hydrogen Radicals

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 2047-2052 ◽  
Author(s):  
Ikuo Suemune ◽  
Kazuhiko Hamaoka ◽  
Tomoaki Koui ◽  
Akihiro Kishimoto ◽  
Masamichi Yamanishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Decomposition Mechanism ◽  
Gaas Surface ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Hydrogen Radicals

The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1292-1296
Author(s):  
S. M. Donovan ◽  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. C. Chow ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 89 (3) ◽  
pp. 031907 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
M. Sadeghi ◽  
A. Larsson ◽  
M. Friesel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy
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