Deep-Submicron Lightly-Doped-Drain and Single-Drain Metal-Oxide-Semiconductor Transistor Drain Current Model for Circuit Simulation

Shau-Shen Liu; Sheng-Lyang Jang

doi:10.1143/jjap.37.64

Deep-Submicron Lightly-Doped-Drain and Single-Drain Metal-Oxide-Semiconductor Transistor Drain Current Model for Circuit Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.64 ◽

1998 ◽

Vol 37 (Part 1, No. 1) ◽

pp. 64-71 ◽

Cited By ~ 4

Author(s):

Shau-Shen Liu ◽

Sheng-Lyang Jang

Keyword(s):

Metal Oxide ◽

Circuit Simulation ◽

Current Model ◽

Drain Current ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lightly Doped Drain

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.687 ◽

1999 ◽

Vol 38 (Part 1, No. 2A) ◽

pp. 687-688 ◽

Cited By ~ 1

Author(s):

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau ◽

Chorng-Jye Sheu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Effect Transistor ◽

Quantum Mechanical Effects

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A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3319656 ◽

2010 ◽

Vol 107 (5) ◽

pp. 054507 ◽

Cited By ~ 6

Author(s):

Jian Zhang ◽

Lining Zhang ◽

Jin He ◽

Mansun Chan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Channel Potential

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Analytical drain current model for graphene metal-oxide semiconductor field-effect transistor

2015 2nd International Conference on Electrical Information and Communication Technologies (EICT) ◽

10.1109/eict.2015.7391989 ◽

2015 ◽

Author(s):

Sudipta Bardhan ◽

Manodipan Sahoo ◽

Hafizur Rahaman

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.2439 ◽

1998 ◽

Vol 37 (Part 1, No. 5A) ◽

pp. 2439-2444 ◽

Cited By ~ 1

Author(s):

Nan-Jian Wu ◽

Naoto Shibata ◽

Yoshihito Amemiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Post Stress

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region

Journal of Applied Physics ◽

10.1063/1.4808453 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214507 ◽

Cited By ~ 2

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Inversion Region ◽

Effect Transistor

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Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.10045 ◽

2002 ◽

Vol 12 (5) ◽

pp. 428-438

Author(s):

Benjamin Iñíguez ◽

Jean-Pierre Raskin

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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A Closed-Form Physical Drain Current Model Considering Energy Balance Equation and Source Resistance for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.6141 ◽

1994 ◽

Vol 33 (Part 1, No. 11) ◽

pp. 6141-6147

Author(s):

Shyh-Yih Ma ◽

James B. Kuo

Keyword(s):

Energy Balance ◽

Closed Form ◽

Balance Equation ◽

Current Model ◽

Drain Current ◽

Energy Balance Equation ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Source Resistance

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1050 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1050-1053 ◽

Cited By ~ 1

Author(s):

Masayasu Miyake ◽

Toshio Kobayashi ◽

Yutaka Sakakibara ◽

Kimiyoshi Deguchi ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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