Light Emission and Surface States Annealing on GaAs Metal Semiconductor Field-Effect Transistor

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 455-461 ◽  
Author(s):  
Hajime Sasaki ◽  
Masayuki Abe ◽  
Kazuo Hayashi ◽  
Takashi Fujioka ◽  
Kiyoshi Mizuguchi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Light Emission ◽  
Surface States ◽  
Effect Transistor

scholarly journals Resolving ambiguities in nanowire field-effect transistor characterization

Nanoscale ◽  
2015 ◽  
Vol 7 (43) ◽  
pp. 18188-18197 ◽  
Author(s):  
Sebastian Heedt ◽  
Isabel Otto ◽  
Kamil Sladek ◽  
Hilde Hardtdegen ◽  
Jürgen Schubert ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Evaluation Method ◽  
Surface States ◽  
Profound Impact ◽  
Nanowire Surface ◽  
Dual Gate ◽  
Effect Transistor

The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.

Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor

2003 ◽  
Vol 12 (4) ◽  
pp. 389-393
Author(s):  
Yang Lin-An ◽  
Yu Chun-Li ◽  
Zhang Yi-Men ◽  
Zhang Yu-Ming
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Surface States ◽  
Frequency Effects ◽  
Effect Transistor

Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation

1997 ◽  
Vol 36 (Part 1, No. 4A) ◽  
pp. 2068-2072 ◽  
Author(s):  
Hajime Sasaki ◽  
Kazuo Hayashi ◽  
Takashi Fujioka ◽  
Kiyoshi Mizuguchi ◽  
Byeongdeok Yea ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Surface States ◽  
Effect Transistor ◽  
High Temperature Operation

Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

2007 ◽  
Vol 102 (1) ◽  
pp. 013103 ◽  
Author(s):  
James S. Swensen ◽  
Jonathan Yuen ◽  
Dan Gargas ◽  
Steven K. Buratto ◽  
Alan J. Heeger
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Light Emission ◽  
Device Physics ◽  
Semiconducting Polymer ◽  
Effect Transistor

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene

2014 ◽  
Vol 16 (47) ◽  
pp. 25729-25733 ◽  
Author(s):  
Byoungnam Park ◽  
Kevin Whitham ◽  
Kaifu Bian ◽  
Yee-Fun Lim ◽  
Tobias Hanrath
Keyword(s):  
Charge Transport ◽  
Carrier Concentration ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Surface States ◽  
Trap States ◽  
Pbs Nanocrystals ◽  
Nanocrystal Films ◽  
Effect Transistor

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs.

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