In SituFormation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics

1993 ◽  
Vol 32 (Part 1, No. 1A) ◽  
pp. 65-66 ◽  
Author(s):  
Tadaoki Kusaka ◽  
Yoshihiko Suzuki ◽  
Tsutom Yotsuya ◽  
Akira Aoki ◽  
Souichi Ogawa ◽  
...  
2020 ◽  
Vol 7 (9) ◽  
pp. 1901848 ◽  
Author(s):  
Zhenbei He ◽  
Junxiong Guo ◽  
Shangdong Li ◽  
Zhicheng Lei ◽  
Lin Lin ◽  
...  

2004 ◽  
Vol 19 (3) ◽  
pp. 26-28
Author(s):  
Liang Fei ◽  
Zhou Dong-xiang ◽  
LV Wen-zhong ◽  
Gong Shu-ping

Author(s):  
G. G. Cocks ◽  
C. E. Cluthe

The freeze etching technique is potentially useful for examining dilute solutions or suspensions of macromolecular materials. Quick freezing of aqueous solutions in Freon or propane at or near liquid nitrogen temperature produces relatively large ice crystals and these crystals may damage the structures to be examined. Cryoprotective agents may reduce damage to the specimem, hut their use often results in the formation of a different set of specimem artifacts.In a study of the structure of polyethylene oxide gels glycerol and sucrose were used as cryoprotective agents. The experiments reported here show some of the structures which can appear when these cryoprotective agents are used.Figure 1 shows a fractured surface of a frozen 25% aqueous solution of sucrose. The branches of dendritic ice crystals surrounded hy ice-sucrose eutectic can be seen. When this fractured surface is etched the ice in the dendrites sublimes giving the type of structure shown in Figure 2. The ice-sucrose eutectic etches much more slowly. It is the smooth continuous structural constituent surrounding the branches of the dendrites.


Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.


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