scholarly journals Self‐Driven Photodetectors: GaSe/MoS 2 Heterostructure with Ohmic‐Contact Electrodes for Fast, Broadband Photoresponse, and Self‐Driven Photodetectors (Adv. Mater. Interfaces 9/2020)

2020 ◽  
Vol 7 (9) ◽  
pp. 2070050 ◽  
Author(s):  
Zhenbei He ◽  
Junxiong Guo ◽  
Shangdong Li ◽  
Zhicheng Lei ◽  
Lin Lin ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Electrodes

GaSe/MoS 2 Heterostructure with Ohmic‐Contact Electrodes for Fast, Broadband Photoresponse, and Self‐Driven Photodetectors

2020 ◽  
Vol 7 (9) ◽  
pp. 1901848 ◽  
Author(s):  
Zhenbei He ◽  
Junxiong Guo ◽  
Shangdong Li ◽  
Zhicheng Lei ◽  
Lin Lin ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Electrodes

In SituFormation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics

1993 ◽  
Vol 32 (Part 1, No. 1A) ◽  
pp. 65-66 ◽  
Author(s):  
Tadaoki Kusaka ◽  
Yoshihiko Suzuki ◽  
Tsutom Yotsuya ◽  
Akira Aoki ◽  
Souichi Ogawa ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Electrodes ◽  
Fractured Surface

The printing and firing process of A1 paste in PTC ohmic contact electrodes

2004 ◽  
Vol 19 (3) ◽  
pp. 26-28
Author(s):  
Liang Fei ◽  
Zhou Dong-xiang ◽  
LV Wen-zhong ◽  
Gong Shu-ping
Keyword(s):  
Ohmic Contact ◽  
Firing Process ◽  
Contact Electrodes

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Optimization of ohmic contact on n-type GaAs by screen-printing silver paste

2020 ◽  
Vol 59 (8) ◽  
pp. 081005
Author(s):  
Qiangjian Sun ◽  
Junhua Long ◽  
Pan Dai ◽  
Xinping Huang ◽  
Shuhong Nie ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Screen Printing ◽  
Silver Paste
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