The printing and firing process of A1 paste in PTC ohmic contact electrodes

2004 ◽  
Vol 19 (3) ◽  
pp. 26-28
Author(s):  
Liang Fei ◽  
Zhou Dong-xiang ◽  
LV Wen-zhong ◽  
Gong Shu-ping
Keyword(s):  
Ohmic Contact ◽  
Firing Process ◽  
Contact Electrodes

GaSe/MoS 2 Heterostructure with Ohmic‐Contact Electrodes for Fast, Broadband Photoresponse, and Self‐Driven Photodetectors

2020 ◽  
Vol 7 (9) ◽  
pp. 1901848 ◽  
Author(s):  
Zhenbei He ◽  
Junxiong Guo ◽  
Shangdong Li ◽  
Zhicheng Lei ◽  
Lin Lin ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Electrodes

In SituFormation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics

1993 ◽  
Vol 32 (Part 1, No. 1A) ◽  
pp. 65-66 ◽  
Author(s):  
Tadaoki Kusaka ◽  
Yoshihiko Suzuki ◽  
Tsutom Yotsuya ◽  
Akira Aoki ◽  
Souichi Ogawa ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Electrodes ◽  
Fractured Surface

Study on Properties of Thick-Film Front Silver Electrodes for Silicon Solar Cells

2013 ◽  
Vol 537 ◽  
pp. 209-213 ◽  
Author(s):  
Ming Fu ◽  
Gong Lei Jin ◽  
Xiao Ding ◽  
Lin Fan ◽  
Dong Chen
Keyword(s):  
Solar Cells ◽  
Thick Film ◽  
Firing Temperature ◽  
Ohmic Contact ◽  
Phosphorus Compounds ◽  
Silicon Solar Cells ◽  
Firing Process ◽  
N Doping ◽  
Silver Electrodes ◽  
The Right

The front electrode is usually made by the screen printing thick-film silver pastes and the high-temperature firing process in industrial production of silicon solar cells. This paper analyzed the ohmic contact mechanism of thick-film front silver electrodes and studied the microstructure of Ag-Si interface by SEM. The paste samples, used to form front silver electrodes of silicon solar cells, were prepared. Thick-film silver electrodes were printed on silicon wafers with different sheet resistances, and the relationships between the sheet resistances and the contact properties were investigated by changing the firing temperature. By adding right amount of phosphorus compounds to the silver paste, the effects of the donor-doping (N-doping) concentrations on the series resistance of cells were studied. The experimental results show that firing temperature is critical to the Ag-Si ohmic contact, particularly when the silver pastes are designed for the wafers with high sheet resistance and the right amount of N-doping addition in the paste may decrease the series resistances of solar cells.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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