Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis

1992 ◽  
Vol 31 (Part 1, No. 1) ◽  
pp. 87-88 ◽  
Author(s):  
Hisatsugu Kawahara ◽  
Yoichi Okamoto ◽  
Kenichiro Tahira ◽  
Jun Morimoto ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Deep Levels ◽  
Waveform Analysis ◽  
Junction Capacitance

Evaluation of interface junction capacitance of perovskite solar cells by direct current measurement

2019 ◽  
Author(s):  
Satoshi Uchida ◽  
Ludmila Cojocaru ◽  
Hiromi Tobita ◽  
Viraji Jayaweera ◽  
Shoji Kaneko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Direct Current ◽  
Perovskite Solar Cells ◽  
Current Measurement ◽  
Junction Capacitance ◽  
Direct Current Measurement

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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