Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 451-453 ◽  
Author(s):  
Mitsuru Imaizumi ◽  
Takashi Saka ◽  
Takashi Jimbo ◽  
Tetsuo Soga ◽  
Masayoshi Umeno
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
Si Substrates ◽  
Organic Vapor ◽  
Metal Organic ◽  
Dimensional Growth

Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

2003 ◽  
Vol 32 (7) ◽  
pp. 728-732 ◽  
Author(s):  
M. Niraula ◽  
K. Yasuda ◽  
T. Ishiguro ◽  
Y. Kawauchi ◽  
H. Morishita ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Si Substrates ◽  
Organic Vapor ◽  
Metal Organic

Blanket and patterned growth of CdTe on (211)Si substrates by metal-organic vapor phase epitaxy

2012 ◽  
Vol 9 (8-9) ◽  
pp. 1712-1715 ◽  
Author(s):  
Ishwara B. Bhat ◽  
Sunil R. Rao ◽  
Shashidhar Shintri ◽  
Randolph N. Jacobs
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Patterned Growth ◽  
Si Substrates ◽  
Organic Vapor ◽  
Metal Organic

Selective Growth of GaP on Si by Metal Organic Vapor Phase Epitaxy

1995 ◽  
Vol 417 ◽  
Author(s):  
J. S. Lee ◽  
J. Salzman ◽  
D. Emerson ◽  
J. R. Shealy ◽  
J. M. Ballantyne
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Gradual Transition ◽  
Large Defect ◽  
Si Substrates ◽  
Organic Vapor ◽  
Micro Raman Spectroscopy ◽  
High Resolution Tem ◽  
Metal Organic

AbstractExtremely flat layers of GaP were grown on 4° miscut (100) Si substrates by selective Metal- Organic Vapor Phase Epitaxy. An enhancement of Re@3 was measured at the growth edges, which corresponds to a Sherwood number of 12.5. Defect-free growth is obtained at the edge of the silicon nitride mask. A gradual transition to growth with a large defect density is observed with increasing distance from the mask edges. In the defect free areas, a recovery of the (100) crystal plane is consistently measured on top of the grown mesas. This seems to indicate a pure layer-bylayer homoepitaxial mode (Frank-van der Merve mode) after the island mode nucleation (Volmer- Weber mode) on Silicon is completed, forming a thin smooth seed layer. High Resolution TEM shows a uniform Si-GaP transition. Micro-Raman Spectroscopy with spatial resolution of ˜1 micrometer was performed to assess the crystal quality as a function of the distance from the growth edge.

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
Sign in / Sign up

Export Citation Format

Share Document