Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
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2013 ◽
Vol 52
(8S)
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pp. 08JL10
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2010 ◽
Vol 124
(2-3)
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pp. 1126-1133
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1999 ◽
Vol 38
(Part 1, No. 3A)
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pp. 1334-1338
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