GaAs FET Prepared with Molecular Beam Epitaxial Films

1975 ◽  
Vol 14 (4) ◽  
pp. 581-582 ◽  
Author(s):  
Mitsuru Naganuma ◽  
Kiichi Kamimura ◽  
Kiyoshi Takahashi ◽  
Yoshio Sakai
Keyword(s):  
Molecular Beam ◽  
Epitaxial Films ◽  
Molecular Beam Epitaxial

Spectra analysis of annealed Hg1−xCdxTe molecular beam epitaxial films

1998 ◽  
Vol 73 (10) ◽  
pp. 1376-1378 ◽  
Author(s):  
Biao Li ◽  
Yan Wu ◽  
Yongsheng Gui ◽  
Hongjuan Ye ◽  
Yong Chang ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Epitaxial Films ◽  
Spectra Analysis ◽  
Molecular Beam Epitaxial

Tunnel spectroscopy using titanium metal barriers onp−‐Si/p+‐Si molecular beam epitaxial films

1987 ◽  
Vol 51 (11) ◽  
pp. 811-813 ◽  
Author(s):  
W. Cabanski ◽  
M. Schulz ◽  
E. Kasper ◽  
H. J. Herzog
Keyword(s):  
Molecular Beam ◽  
Epitaxial Films ◽  
Titanium Metal ◽  
Molecular Beam Epitaxial ◽  
Tunnel Spectroscopy

scholarly journals Erratum: “Spectra analysis of annealed Hg1−xCdxTe molecular beam epitaxial films” [Appl. Phys. Lett. 73, 1376 (1998)]

1998 ◽  
Vol 73 (15) ◽  
pp. 2221-2221
Author(s):  
Biao Li ◽  
Yan Wu ◽  
Yongsheng Gui ◽  
Hongjuan Ye ◽  
Yong Chang ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Epitaxial Films ◽  
Spectra Analysis ◽  
Molecular Beam Epitaxial

Ionized Zn doping of GaAs molecular beam epitaxial films

1975 ◽  
Vol 27 (6) ◽  
pp. 342-344 ◽  
Author(s):  
Mitsuru Naganuma ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam ◽  
Epitaxial Films ◽  
Zn Doping ◽  
Molecular Beam Epitaxial

Molecular-Dynamics Study of the Growth of Si1-xGex on Si(100)2×1

1990 ◽  
Vol 202 ◽  
Author(s):  
Stéphane Ethier ◽  
Laurent J. Lewis
Keyword(s):  
Molecular Dynamics ◽  
High Temperature ◽  
Molecular Beam ◽  
Experimental Studies ◽  
Epitaxial Films ◽  
High Temperature Annealing ◽  
Effective Potentials ◽  
Molecular Beam Epitaxial ◽  
Dynamics Simulations ◽  
Substrate Temperatures

ABSTRACTWe use molecular-dynamics simulations to study the growth of pure Si, Si0.5Ge0.5 and pure Ge on the reconstructed (100) surface of Si. The atoms interact with one another via effective potentials of the Stillinger-Weber form with parameters adjusted such as to describe all types of triplet interactions. Motivated by recent experimental studies of molecular-beam epitaxial films,1 we examine in particular the structure of the deposits for various substrate temperatures. We also examine the relaxation of the structure resulting from high-temperature annealing. Finally, we investigate the interdiffusion of the species at the substrate-deposit interface.

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