AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

2008 ◽  
Vol 1 ◽  
pp. 021103 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Takashi Mimura ◽  
Toshiaki Matsui
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Dc and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field Effect Transistors on Sic Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Q. Chen ◽  
J. W. Yang ◽  
M. A. Khan ◽  
A. T. Ping ◽  
I. Adesida
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Channel Current ◽  
Heterostructure Field Effect Transistors ◽  
High Power Operation ◽  
Drain Bias ◽  
Gan Heterostructure ◽  
High Transconductance ◽  
P Type

AbstractHigh quality AJGaN/GaN heterostructures have been successfully deposited on both nand p-type SiC substrates. Heterostructure field effect transistors fabricated using these layers exhibited high channel current density (1.71 A/mm), well behaved pinch-off characteristics, and excellent extrinsic transconductance (Gm = 229 mS/mm). There is negligible channel current degradation up to a source to drain bias of 20 V as opposed to devices grown on sapphire substrates. The 0.25 μm gate-length devices fabricated on the heterostructures grown on p-type SiC has allowed us to extract a cutoff frequency of 53 GHz. The cutoff frequency showed little deterioration with increasing drain bias voltage. These results demonstrate for the first time the high frequency and high power operation potential of the heterostructure field effect transistors based on AlGaN grown on SiC.

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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