Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes
In this work, we report theoretical and experimental study of Pd/ZnO nanorod (NR) Schottky diodes-based ultraviolet photodetector (UV-PD). The ZnO-NRs are deposited on indium tin oxide (ITO) coated glass substrates by using a low-temperature hydrothermal method. The surface morphology of the ZnO-NRs film is characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The SEM image shows vertically grown NRs with uniformity, and XRD shows the preferred (002) orientation of ZnO-NR films. The current–voltage characteristics of Pd/ZnO-NR Schottky diodes are studied under dark and UV light. A voltage bias from [Formula: see text]1[Formula: see text]V to [Formula: see text]1[Formula: see text]V is applied and the ratio of photocurrent to dark current was ([Formula: see text] at [Formula: see text][Formula: see text]V) calculated from the [Formula: see text]–[Formula: see text] curve. The value of responsivity was found to be 0.111[Formula: see text]A/W at [Formula: see text][Formula: see text]nm and at [Formula: see text][Formula: see text]V. An approximated UV-PD structure has also been numerically simulated using three-dimensional (3D) device simulator from Visual TCAD of Cogenda International. The simulated [Formula: see text]–[Formula: see text] characteristics have also been plotted under both dark and light conditions. The simulated results are found to be following the nature of experimental results.