Electrical properties of some molten ternary semiconductors

1977 ◽  
Vol 55 (11) ◽  
pp. 1975-1978 ◽  
Author(s):  
Yoshio Nakamura ◽  
Masamitsu Naoi ◽  
Mitsuo Shimoji
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Ternary Semiconductors ◽  
Effect Of Doping

The electrical conductivity and thermoelectric power of molten AgTlSe2, AgTlSe, and Tl2Se3 have been measured as a function of temperature. The effect of doping with Ag, Tl, and Se on the electrical properties of molten AgTlSe has also been studied. The results are discussed in terms of the pseudogap model.

Electrical properties of InAsxSb1−x alloys

1968 ◽  
Vol 46 (10) ◽  
pp. 1207-1214 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Conductivity Data ◽  
Absorption Data ◽  
Alloy Scattering ◽  
Electrical Conductivity Data

Measurements have been made of the high-temperature Hall coefficient, electrical conductivity, and thermoelectric power in polycrystalline n-type samples of InAsxSb1−x alloys of extrinsic carrier concentration ~1017/cm3. From the Hall-coefficient data, values of the extrapolated absolute-zero band gap E00 have been determined over the whole alloy range, the thermoelectric power results being used to provide a correction factor to allow for effects of degeneracy. In all cases this correction was found to be very small. The resultant values of E00 for the alloys are somewhat lower than those obtained previously from optical absorption data and show a minimum of 0.17 eV at x ~0.4. From the electrical conductivity data, values of electron mobility μc have been obtained as a function of temperature T and composition x. At all temperatures in the range 0–500 °C, μc is found to vary linearly with x, indicating that the effects of alloy scattering are negligible. For each value of x, μc is found to satisfy the relation μc = μ0 exp (−T/θ), and the variation of θ with x has been determined.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

scholarly journals Oxygen vacancy doping of hematite analyzed by electrical conductivity and thermoelectric power measurements

2017 ◽  
Vol 1 (6) ◽  
Author(s):  
Jan Mock ◽  
Benjamin Klingebiel ◽  
Florian Köhler ◽  
Maurice Nuys ◽  
Jan Flohre ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Oxygen Vacancy ◽  
Thermoelectric Power ◽  
Power Measurements ◽  
Vacancy Doping

Metal-like electrical conductivity in LaxSr2−xTiMoO6 oxides for high temperature thermoelectric power generation

2017 ◽  
Vol 46 (18) ◽  
pp. 5872-5879 ◽  
Author(s):  
Mandvi Saxena ◽  
Tanmoy Maiti
Keyword(s):  
Power Generation ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Energy Conversion ◽  
Thermoelectric Power ◽  
Conversion Efficiency ◽  
Energy Conversion Efficiency ◽  
Power Generators ◽  
Thermoelectric Power Generation

Increasing electrical conductivity in oxides, which are inherently insulators, can be a potential route in developing oxide-based thermoelectric power generators with higher energy conversion efficiency.

Enhanced electrical conductivity of Au–LaNiO3 nanocomposite thin films by chemical solution deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (94) ◽  
pp. 76783-76787 ◽  
Author(s):  
H. L. Wang ◽  
X. K. Ning ◽  
Z. J. Wang
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Nanocomposite Thin Films ◽  
One Step

Au–LaNiO3 (Au–LNO) nanocomposite films with 3.84 at% Au were firstly fabricated by one-step chemical solution deposition (CSD), and their electrical properties were investigated.

Studies on Polyaniline: Polyethyleneterephthalate Films

2006 ◽  
Vol 111 ◽  
pp. 99-102 ◽  
Author(s):  
A.A. Ahmed ◽  
Faiz Mohammad
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Arrhenius Equation ◽  
Great Increase ◽  
Thermooxidative Stability ◽  
Ambient Conditions ◽  
Dc Electrical Conductivity ◽  
The Stability ◽  
Almost All ◽  
Conductivity Retention

The films of polyaniline:polyethyleneterephthalate films were prepared by polymerizing aniline soaked in polyethyleneterephthalate films of different thicknesses. The films were characterized by FTIR as well as for their electrical properties. The electrical properties of the films were observed to be of good quality as almost all the films showed a great increase in their electrical conductivity from insulator to semiconductor region after doping with hydrochloric acid. All the films in their doped state follow the Arrhenius equation for the temperature dependence of electrical conductivity from 35 to 115oC. The thermooxidative stability was studied by thermogravimetry and differential thermal analysis. The stability in terms of dc electrical conductivity retention was also studied under ambient conditions by two slightly different techniques viz. isothermal and cyclic techniques. The dc electrical conductivity of the films was found to be stable below 90oC for all the films under ambient conditions.

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

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