Low-frequency noise in RF-sputtered Pb-doped 2223 phase BiSrCaCuO thin films

1994 ◽  
Vol 72 (5-6) ◽  
pp. 270-273 ◽  
Author(s):  
I. Shih ◽  
A. L. Li ◽  
W. W. Lam ◽  
C. X. Qiu ◽  
L. Ngo Phong ◽  
...  
Keyword(s):  
Thin Films ◽  
Normal State ◽  
Room Temperature ◽  
Low Frequency ◽  
Thermal Fluctuation ◽  
Temperature Curve ◽  
Frequency Noise ◽  
Superconducting Thin Films ◽  
Current Dependence ◽  
Noise Measurements

Noise measurements were carried out on RF-sputtered Pb-doped 2223 phase BiSrCaCuO superconducting thin films. No definite relationship between noise and bias current was observed in the superconducting state, however, a square-current dependence of noise was found in the normal state. The magnitude of the noise in the BiSrCaCuO films at room temperature was one to five orders of magnitude larger than that in a normal metal. Near the tail of the resistance transition, noise peaks were observed that were 3–12 K below the maximum of the derivative resistance–temperature curve. Noise dependence on frequency shows an approximate 1/f relation in both normal and superconducting states. The origin of the noise in the normal state is believed to be due to thermal fluctuation or resistance fluctuation and the larger noise near zero TC is possibly caused by grain boundaries in the films.

scholarly journals Noise Properties of Graphene-Polymer Thick-Film Resistors

2017 ◽  
Vol 24 (4) ◽  
pp. 585-590 ◽  
Author(s):  
Krzysztof Mleczko ◽  
Piotr Ptak ◽  
Zbigniew Zawiślak ◽  
Marcin Słoma ◽  
Małgorzata Jakubowska ◽  
...  
Keyword(s):  
Thick Film ◽  
Room Temperature ◽  
Low Frequency ◽  
Frequency Noise ◽  
Potential Applications ◽  
Noise Measurements ◽  
Manufacturing Technologies ◽  
Main Component ◽  
Resistance Fluctuations ◽  
Parameter Values

AbstractGraphene is a very promising material for potential applications in many fields. Since manufacturing technologies of graphene are still at the developing stage, low-frequency noise measurements as a tool for evaluating their quality is proposed. In this work, noise properties of polymer thick-film resistors with graphene nano-platelets as a functional phase are reported. The measurements were carried out in room temperature. 1/f noise caused by resistance fluctuations has been found to be the main component in the specimens. The parameter values describing noise intensity of the polymer thick-film specimens have been calculated and compared with the values obtained for other thick-film resistors and layers used in microelectronics. The studied polymer thick-film specimens exhibit rather poor noise properties, especially for the layers with a low content of the functional phase.

scholarly journals Generation Recombination Noise in GaN Photoconducting Detectors

1999 ◽  
Vol 4 (S1) ◽  
pp. 817-822
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generationrecombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

Low frequency noise in YBaCuO superconducting thin films deposited on MgO

2002 ◽  
Vol 12 (3) ◽  
pp. 183-186
Author(s):  
G. Leroy ◽  
J. Gest ◽  
P. Tabourier ◽  
J.-C. Carru ◽  
A. F. Dégardin ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Superconducting Thin Films ◽  
Low Frequency Noise

Generation Recombination Noise in GaN Photoconducting Detectors

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

AbstractLow frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generation-recombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

scholarly journals LOW-FREQUENCY NOISE MEASUREMENTS OF IR PHOTODETECTORS WITH VOLTAGE CROSS CORRELATION SYSTEM

Measurement ◽  
2021 ◽  
pp. 109867
Author(s):  
Krzysztof ACHTENBERG ◽  
Janusz MIKOŁAJCZYK ◽  
Carmine CIOFI ◽  
Graziella SCANDURRA ◽  
Krystian MICHALCZEWSKI ◽  
...  
Keyword(s):  
Cross Correlation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Ir Photodetectors ◽  
Noise Measurements ◽  
Correlation System
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