Electrophysical and photoelectrical properties of epitaxial films of Hg1−xCdxTe (x ≈ 0.2) after laser treatment

1992 ◽  
Vol 70 (5) ◽  
pp. 357-360 ◽  
Author(s):  
M. Kuźma ◽  
C. Abeynayake ◽  
E. M. Sheregii ◽  
Y. O. Ugrin ◽  
I. S. Virt
Keyword(s):  
Energy Density ◽  
Laser Pulse ◽  
Laser Treatment ◽  
Cluster Model ◽  
Spectral Dependence ◽  
Laser Annealing ◽  
Epitaxial Films ◽  
Photoelectrical Properties ◽  
Before And After ◽  
Nonequilibrium Carriers

Changes in the electrophysical and photoelectrical properties of epitaxial films of Hg1−xCdxTe (x ≈ 0.2) due to laser annealing are studied. Experimental fits for the dependence of the resistance of the film to the energy density of the laser pulse, to the time, as well as to the temperature are obtained before and after laser annealing. Further, changes in the lifetime of minority nonequilibrium carriers of charge and the spectral dependence of the photoconductivity because of laser annealing are shown. Experimental results are interpreted on the basis of the two cluster model for electro- and photoconductivity.

Computer Modelling of Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
P. Baeri
Keyword(s):  
Energy Density ◽  
Heat Flow ◽  
Laser Pulse ◽  
Substrate Temperature ◽  
Pulse Duration ◽  
Laser Annealing ◽  
Computer Modelling ◽  
Main Emphasis ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTHeat flow calculations, based on the main assumption that the energy of the incident pulse is instantaneously and locally converted into heat, are used to review the results of laser pulse annealing and impurities behaviour in ion implanted semiconductors. The crystallization behaviour of amorphous layers, the velocity of the solid-liquid interface and impurity redistribution are detailed with the main emphasis on the relevance of the parameters (laser wavelen gth, pulse duration and energy density, substrate temperature, etc.) that can be experimentally controlled. Comparison with the latest experimental results is also given.

Creation of a pn heterojunction in Hg1−xCdxTe (x ≈ 0.2) by laser annealing

1995 ◽  
Vol 73 (3-4) ◽  
pp. 174-176
Author(s):  
E. Sheregii ◽  
M. Kuźma ◽  
C. Abeynayake ◽  
M. Pociask
Keyword(s):  
Energy Density ◽  
Laser Treatment ◽  
Solid Solutions ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Computer Modelling ◽  
Mass Transportation ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

A highly photosensitive diode area was created in solid solutions of Hg1−xCdxTe (x ≈ m 0.2) (MCT) without melting its surface. The idea of the possible formation of pn heterojunctions, which was indicated by computer modelling of the mass transportation processes under laser treatment of the MCT, was experimentally realized. MCT samples were irradiated with an Nd:YAG laser having an energy density of 0.7 J cm−2. The presence of a heterojunction on a surface not far below the upper surface has been verified by photovoltaic measurements and X-ray microanalysis as well as by current–voltage characteristics.

scholarly journals Scientific validation of three-dimensional stereophotogrammetry compared to the IGAIS clinical scale for assessing wrinkles and scars after laser treatment

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Barbara Helena Barcaro Machado ◽  
Ivy Dantas De Melo E. Silva ◽  
Walter Marou Pautrat ◽  
James Frame ◽  
Mohammad Najlah
Keyword(s):  
Laser Treatment ◽  
Three Dimensional ◽  
Skin Surface ◽  
Clinical Scale ◽  
3D Images ◽  
Laser Resurfacing ◽  
Before And After ◽  
Measuring Outcomes ◽  
Skin Scar ◽  
Scientific Validation

AbstractMeasuring outcomes from treatments to the skin is either reliant upon patient’s subjective feedback or scale-based peer assessments. Three-Dimensional stereophotogrammetry intend to accurately quantify skin microtopography before and after treatments. The objective of this study is comparing the accuracy of stereophotogrammetry with a scale-based peer evaluation in assessing topographical changes to skin surface following laser treatment. A 3D stereophotogrammetry system photographed skin surface of 48 patients with facial wrinkles or scars before and three months after laser resurfacing, followed immediately by topical application of vitamin C. The software measured changes in skin roughness, wrinkle depth and scar volume. Images were presented to three observers, each independently scoring cutaneous improvement according to Investigator Global Aesthetic Improvement Scale (IGAIS). As for the results, a trend reflecting skin/scar improvement was reported by 3D SPM measurements and raters. The percentage of topographical change given by the raters matched 3D SPM findings. Agreement was highest when observers analysed 3D images. However, observers overestimated skin improvement in a nontreatment control whilst 3D SPM was precise in detecting absence of intervention. This study confirmed a direct correlation between the IGAIS clinical scale and 3D SPM and confirmed the efficacy and accuracy of the latter when assessing cutaneous microtopography alterations as a response to laser treatment.

scholarly journals Pulsations of blue supergiants before and after helium core ignition

2013 ◽  
Vol 9 (S301) ◽  
pp. 321-324
Author(s):  
Jakub Ostrowski ◽  
Jadwiga Daszyńska-Daszkiewicz
Keyword(s):  
Energy Density ◽  
Kinetic Energy ◽  
Kinetic Energy Density ◽  
Low Degree ◽  
Before And After

AbstractWe present results of pulsation analyses of B-type supergiant models with masses of 14 – 18 M⊙, considering evolutionary stages before and after helium core ignition. Using a non-adiabatic pulsation code, we compute instability domains for low-degree modes. For selected models in these two evolutionary phases, we compare properties of pulsation modes. Significant differences are found in oscillation spectra and the kinetic energy density of pulsation modes.

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Measurement of Ex Vivo Porcine Lens Shape During Simulated Accommodation, Before and After fs-Laser Treatment

2015 ◽  
Vol 56 (9) ◽  
pp. 5332 ◽  
Author(s):  
Jan Hahn ◽  
Michael Fromm ◽  
Fedaa AL Halabi ◽  
Silke Besdo ◽  
Holger Lubatschowski ◽  
...  
Keyword(s):  
Laser Treatment ◽  
Ex Vivo ◽  
Before And After ◽  
Fs Laser

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

scholarly journals Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing

1999 ◽  
Vol 14 (8) ◽  
pp. 3433-3438 ◽  
Author(s):  
Jian-Shing Luo ◽  
Yu-Lin Hang ◽  
Wen-Tai Lin ◽  
C. Y. Chang ◽  
P. S. Shih
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Strain Relaxation ◽  
Single Layer ◽  
Amorphous Structure ◽  
Pulse Number ◽  
Interfacial Reactions ◽  
Constitutional Supercooling ◽  
Depth Direction ◽  
Krf Laser

Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing as a function of energy density and pulse number were studied. For the Co/Si0.76Ge0.24 samples annealed at an energy density of 0.2–0.6 J/cm2, three germanosilicide layers, i.e., amorphous structure and/or nanocrystal, Co(Si1−xGex), and Co(Si1−xGex)2, were successively formed along the film-depth direction. At 0.3 J/cm2 Ge segregated to the underlying Si0.76Ge0.24 film, inducing strain relaxation in the residual Si0.76Ge0.24 film. At 0.8 J/cm2 the reacted region was mostly transformed to a single layer of Co(Si1−xGex)2, whereas Ge further diffused to the Si substrate. At 1.0 J/cm2, constitutional supercooling appeared. Even the Co(Si0.76Ge0.24) film used as the starting material for laser annealing could not prevent the occurrence of constitutional supercooling at energy densities >1.6 J/cm2. The energy densities at which Co(Si1−xGex) transformation to Co(Si1−xGex)2, Ge segregation to the underlying Si, and constitutional supercooling occurred were higher for the Co(Si0.76Ge0.24)/ Si0.76Ge0.24 system than for the Co/Si0.76Ge0.24 system. Higher energy density and/or pulse number enhanced the growth of Co(Si1−xGex)2 film. In the present study, the Co/Si0.76Ge0.24 samples subjected to annealing at 0.2 J/cm2 for 20 pulses produced a smooth Co(Si0.76Ge0.24)2 film without inducing Ge segregation out of the germanosilicide and strain relaxation in the unreacted Si0.76Ge0.24 film.

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

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