An improved wide dynamic range silicon photodetector for integration in image sensor arrays

1987 ◽  
Vol 65 (8) ◽  
pp. 919-923
Author(s):  
Brian C. Doody ◽  
Savvas G. Chamberlain
Keyword(s):  
Light Intensity ◽  
Metal Oxide ◽  
Dynamic Range ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
Wide Dynamic Range ◽  
Silicon Photodetector

DALSA Inc., Waterloo, Ont., has designed, simulated, and tested a novel silicon photodetector offering several important performance advantages over current industry-standard devices. Currently available imaging devices offered by various manufacturers are typically sensitive to varying light intensity over three orders of magnitude in optical power, while DALSA's novel design offers a logarithmic response of greater than six orders of magnitude in light intensity.Designed to use to advantage the subthreshold effect of short-channel metal oxide semiconductor field effect transistors, the new device is readily integrated into large arrays featuring charge coupled device readout shift registers and metal oxide semiconductor support circuitry. Several devices designed by DALSA incorporating the new detector have been fabricated and tested, including discrete detectors, linear arrays, and area arrays.This paper discusses the theory of operation and performance of an improved wide dynamic range photodetector. Performance considerations include dynamic range, quantum efficiency, noise and noise equivalent power, responsivity, and speed. This photodetector can be integrated to form silicon image sensor arrays. Experimental results will also be presented that demonstrate a maximum-to-minimum detectable light intensity of greater than 106.

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range

A Complementary Metal Oxide Semiconductor Image Sensor with Increased Dynamic Range Using Feedback Reset Mechanism

2015 ◽  
Vol 13 (8) ◽  
pp. 658-662
Author(s):  
Byoung-Soo Choi ◽  
Sung-Hyun Jo ◽  
Myunghan Bae ◽  
Jeongyeob Kim ◽  
Pyung Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

2016 ◽  
Vol 4 (2) ◽  
pp. 130-136
Author(s):  
N.P. Maity ◽  
◽  
Reshmi Maity ◽  
Srimanta Baishya ◽  
◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Active Pixel Sensor ◽  
Active Pixel

In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function

2020 ◽  
Vol 18 (6) ◽  
pp. 468-476
Author(s):  
Prateek Kumar ◽  
Maneesha Gupta ◽  
Naveen Kumar ◽  
Marlon D. Cruz ◽  
Hemant Singh ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molybdenum Disulphide ◽  
Short Channel ◽  
Tungsten Disulphide ◽  
Channel Effects ◽  
Effect Transistor

With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI industry. This work is dedicated to the design and study of the novel tub-type Metal-Oxide-Semiconductor Field-Effect Transistor. For simulation Non-Equilibrium Green’s Function is used as the primary model of simulation. The device is analyzed under different physical variations like work function, permittivity, and interface trap charge. This work uses Silicon-Molybdenum Disulphide heterojunction and Silicon-Tungsten Disulphide heterojunction as channel material. Results for both the heterojunctions are compared. It was analyzed that Silicon-Molybdenum Disulphide heterojunction provides better linearity and Silicon-Tungsten Disulphide heterojunction provides better switching speed than conventional Metal-Oxide-Semiconductor Field-Effect Transistor.

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