Analysis and assessment of the effects of fixed pattern and quantization noise on the accuracy of color rendition in wide-dynamic-range complementary metal-oxide semiconductor imagers

2010 ◽  
Vol 19 (1) ◽  
pp. 011011
Author(s):  
Stephen O. Otim
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Quantization Noise ◽  
Wide Dynamic Range

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

High Sensitivity Dynamic Range Enhanced Complementary Metal–Oxide–Semiconductor Imager with Noise Suppression

2008 ◽  
Vol 47 (4) ◽  
pp. 2761-2766
Author(s):  
Satoru Adachi ◽  
Woonghee Lee ◽  
Nana Akahane ◽  
Hiromichi Oshikubo ◽  
Koichi Mizobuchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Noise Suppression ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

A Complementary Metal Oxide Semiconductor Image Sensor with Increased Dynamic Range Using Feedback Reset Mechanism

2015 ◽  
Vol 13 (8) ◽  
pp. 658-662
Author(s):  
Byoung-Soo Choi ◽  
Sung-Hyun Jo ◽  
Myunghan Bae ◽  
Jeongyeob Kim ◽  
Pyung Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

An improved wide dynamic range silicon photodetector for integration in image sensor arrays

1987 ◽  
Vol 65 (8) ◽  
pp. 919-923
Author(s):  
Brian C. Doody ◽  
Savvas G. Chamberlain
Keyword(s):  
Light Intensity ◽  
Metal Oxide ◽  
Dynamic Range ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
Wide Dynamic Range ◽  
Silicon Photodetector

DALSA Inc., Waterloo, Ont., has designed, simulated, and tested a novel silicon photodetector offering several important performance advantages over current industry-standard devices. Currently available imaging devices offered by various manufacturers are typically sensitive to varying light intensity over three orders of magnitude in optical power, while DALSA's novel design offers a logarithmic response of greater than six orders of magnitude in light intensity.Designed to use to advantage the subthreshold effect of short-channel metal oxide semiconductor field effect transistors, the new device is readily integrated into large arrays featuring charge coupled device readout shift registers and metal oxide semiconductor support circuitry. Several devices designed by DALSA incorporating the new detector have been fabricated and tested, including discrete detectors, linear arrays, and area arrays.This paper discusses the theory of operation and performance of an improved wide dynamic range photodetector. Performance considerations include dynamic range, quantum efficiency, noise and noise equivalent power, responsivity, and speed. This photodetector can be integrated to form silicon image sensor arrays. Experimental results will also be presented that demonstrate a maximum-to-minimum detectable light intensity of greater than 106.

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