Time-resolved photoluminescence of the defect lines in GaAs molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 838-841
Author(s):  
S. Charbonneau ◽  
M. L. W. Thewalt ◽  
T. Steiner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Energy Region ◽  
Molecular Beam ◽  
Resonant Excitation ◽  
High Quality ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Recombination Processes ◽  
Time Resolved Photoluminescence ◽  
Exciton Transitions

A time-resolved photoluminescence study of the defect-induced bound excitons (DIBE) observed in the energy region 1504–1511 meV in high quality molecular-beam epitaxy grown GaAs has been performed. Our results support the model that these lines consist of two distinct recombination processes. Transient resonant excitation of these DIBE demonstrate that the lines i to s can be associated with acceptor – bound exciton transitions.

scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 7A) ◽  
pp. L930-L933 ◽  
Author(s):  
Takashi Suemasu ◽  
Motoki Takauji ◽  
Cheng Li ◽  
Yoshinori Ozawa ◽  
Masao Ichida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

AbstractWe comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

2000 ◽  
Vol 77 (2) ◽  
pp. 259-261 ◽  
Author(s):  
Kenji Yoshino ◽  
Daisuke Maruoka ◽  
Tetsuo Ikari ◽  
Paul J. Fons ◽  
Shigeru Niki ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Temperature Variation ◽  
Molecular Beam ◽  
High Quality ◽  
Carrier Recombination ◽  
Recombination Processes

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

2008 ◽  
Vol 103 (12) ◽  
pp. 124309 ◽  
Author(s):  
John B. Schlager ◽  
Kris A. Bertness ◽  
Paul T. Blanchard ◽  
Lawrence H. Robins ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Time Resolved Photoluminescence
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