Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

2008 ◽  
Vol 103 (12) ◽  
pp. 124309 ◽  
Author(s):  
John B. Schlager ◽  
Kris A. Bertness ◽  
Paul T. Blanchard ◽  
Lawrence H. Robins ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Time Resolved Photoluminescence

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

2006 ◽  
Vol 88 (21) ◽  
pp. 213106 ◽  
Author(s):  
John B. Schlager ◽  
Norman A. Sanford ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Gan Nanowires ◽  
Catalyst Free

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 115 (4) ◽  
pp. 043517 ◽  
Author(s):  
Marta Sobanska ◽  
Kamil Klosek ◽  
Jolanta Borysiuk ◽  
Slawomir Kret ◽  
Giorgi Tchutchulasvili ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Amorphous Al2o3

scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 7A) ◽  
pp. L930-L933 ◽  
Author(s):  
Takashi Suemasu ◽  
Motoki Takauji ◽  
Cheng Li ◽  
Yoshinori Ozawa ◽  
Masao Ichida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 107 (3) ◽  
pp. 034318 ◽  
Author(s):  
N. A. Sanford ◽  
P. T. Blanchard ◽  
K. A. Bertness ◽  
L. Mansfield ◽  
J. B. Schlager ◽  
...  
Keyword(s):  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Gan Nanowires ◽  
Transient Photoconductivity
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